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Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

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Abstract

Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2D) charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80–300 K. To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs, an empirical equation was derived from a theoretical trapping model, and a carrier velocity distribution was determined from the differentiation of the transient response. Furthermore, charge trapping and de-trapping in shallow- and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate. The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.

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Acknowledgements

This work was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIT) (NRF-2021R1A2C2012855).

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  1. Hyeonwoo Shin and Sang-Joon Park contributed equally to this work.

Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Korea

    Hyeonwoo Shin

  2. Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Korea

    Sang-Joon Park, Byeong-Cheol Kang & Tae-Jun Ha

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  1. Hyeonwoo Shin
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Correspondence to Tae-Jun Ha.

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Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

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Shin, H., Park, SJ., Kang, BC. et al. Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements. Nano Res. 15, 1524–1531 (2022). https://doi.org/10.1007/s12274-021-3697-0

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