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High-quality single-layer graphene via reparative reduction of graphene oxide

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Abstract

Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350–410 S/cm (whilst retaining >96% transparency). X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp2-C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films.

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Authors and Affiliations

  1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China

    Boya Dai, Lei Fu, Lei Liao, Nan Liu, Kai Yan & Zhongfan Liu

  2. College of Chemistry, Nankai University, Tianjin, 300071, China

    Yongsheng Chen

Authors
  1. Boya Dai
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  2. Lei Fu
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  3. Lei Liao
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  4. Nan Liu
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  5. Kai Yan
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  6. Yongsheng Chen
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  7. Zhongfan Liu
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Corresponding authors

Correspondence to Lei Fu or Zhongfan Liu.

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Dai, B., Fu, L., Liao, L. et al. High-quality single-layer graphene via reparative reduction of graphene oxide. Nano Res. 4, 434–439 (2011). https://doi.org/10.1007/s12274-011-0099-8

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  • DOI: https://doi.org/10.1007/s12274-011-0099-8

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