Abstract
Structural parameters, energy band gaps, electronic charge density, phonon modes and transport properties of Al\(_{1-x}\)B\(_{x}\)N ternary alloys in the hypothetical zinc-blende structure are investigated using first-principles total-energy calculations. The authors’ results show that by adding more B atoms into AlN, the material under focus becomes less compressible, less ionic and its energy band gap still (\(\Gamma \)-X) indirect for all alloy compositions x of interest exhibiting a bowing parameter of 1.24 eV. The calculated phonon density of states indicates soft modes for B contents in the interval 0.5 \(\le x\le \) 0.8 suggesting thus non-dynamical stability of the ground-state phase in this composition range. The temperature dependence of structural and transport properties is examined and discussed. The thermal conductivity of cubic BN at 300 K is recorded as 0.862 kW/m\(\cdot \)K showing a very good accord with the experimental values reported in the literature.
Similar content being viewed by others
References
I Bhat, Wide bandgap semiconductor power devices: Materials, physics, design and applications edited by B Jayant Baliga (Woodhead Publishing, Duxford, England 2019) Chap. 3, pp. 43–77
C Z Zhao, T Wei, X D Sun, S S Wang and K Q Lu, Physica B 494, 71 (2016)
A Uedono, S Ishibashi, T Ohdaira and R Suzuki, J. Crystal Growth 311, 3075 (2009)
S Saib and N Bouarissa, Diamond Relat. Mater. 18, 1200 (2009)
S Saib, N Bouarissa, P Rodríguez-Hernández and A Muñoz, Physica B 403, 4059 (2008)
N Bouarissa, Phys. Status Solidi B 231, 391 (2002)
H Morkoç and S N Mohammad, Science 267, 51 (1995)
I Vurgaftman and J R Meyer, J. Appl. Phys. 94, 3675 (2003) and references therein
S Saib and N Bouarissa, J. Phys. Chem. Sol. 67, 1888 (2006)
N Bouarissa, Mater. Chem. Phys. 73, 51 (2002)
I Akasaki, Mater. Sci. Eng. B 74, 101 (2000)
J W Orton and C T Foxon, Rep. Prog. Phys. 61, 1 (1998) and references therein.
N Bouarissa, Philos. Magn. B 80, 1743 (2000)
N Bouarissa and S Saib, J. Appl. Phys. 108, 113710 (2010)
R de Paiva, R A Nogueira, S Azevedo and J R Kaschny, Appl. Phys. A 95, 655 (2009)
L Djoud, A Lachebi, B Merabet and H Abid, Acta Phys. Pol. A 122, 748 (2012)
N Bouarissa and S Saib, Curr. Appl. Phys. 13, 493 (2013)
L Dong, S K Yadav, R Ramprasad and S P Alpay, Appl. Phys. Lett. 96, 202106 (2010)
L Zhang, K Cheng, S Degroute, M Leys, M Germain and G Borghs, J. Appl. Phys. 108, 073522 (2010)
M A Khan, H Algarni and N Bouarissa, Optik 176, 366 (2019)
L C Xu, R Z Wang, X Yang and H Yan, J. Appl. Phys. 110, 043528 (2011)
K Kassali and N Bouarissa, Mater. Chem. Phys. 76, 255 (2002)
P Hohenberg and W Kohn, Phys. Rev. 136, B864 (1964)
W Kohn and L J Sham, Phys. Rev. 140, A1133 (1965)
X Gonze, J M Beuken, R Caracas, F Detraux, M Fuchs, G M Rignanese, L Sindic, M Verstraete, G Zerah, F Jollet, M Torrent, A Roy, M Mikami, P Ghosez, J Y Raty and D C Allan, Comput. Mater. Sci. 25, 478 (2002).
J P Perdew, K Burke and M Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996)
N Troullier and J L Martins, Phys. Rev. B 43, 1993 (1991)
H J Monkhorst and J D Pack, Phys. Rev. B 13, 5188 (1976)
F Birch, Phys. Rev. B 71, 809 (1947)
X Gonze, Phys. Rev. A 52, 1086 (1995)
Erratum, Phys. Rev. A 54, 4591 (1996)
X Gonze, Phys. Rev. A 52, 1096 (1996)
X Gonze, Phys. Rev. B 55, 10337 (1997)
X Wu, D Vanderbilt and D R Hamann, Phys. Rev. B 72, 035105 (2005)
S Baroni, S Gironcoli, A D Corso and P Giannozzi, Rev. Mod. Phys. 73, 515 (2001)
S Saib, N Bouarissa, P Rodríguez-Hernández and A Muñoz, J. Appl. Phys. 103, 013506 (2008)
S Saib, N Bouarissa, P Rodríguez-Hernández and A Muñoz, J. Appl. Phys. 104, 076107 (2008)
U W Pohl, Epitaxy of semiconductors: Introduction to physical principles (Springer-Verlag-Berlin-Heidelberg, 2013) p. 26
M A Blanco, E Francisco and V Luaña, Comput. Phys. Commun. 158, 57 (2004)
G K H Madsen and D J Singh, Comput. Phys. Commun. 175, 67 (2006)
J Bardeen and W Shockley, Phys. Rev. 80, 72 (1950)
J Laflamme Janssen, Y Gillet, S Poncé, A Martin, M Torrent and X Gonze, Phys. Rev. B 93, 205147 (2016)
A Gueddim, N Bouarissa and A Villesuzanne, Phys. Scr. 80, 055702 (2009)
S Zerroug, F Ali Sahraoui and N Bouarissa, Appl. Phys. A 97, 345 (2009)
S Saib, N Bouarissa, P Rodríguez-Hernández and A Muñoz, Eur. Phys. J. B 73, 185 (2010)
J L Pankove and T D Moustakas, in Semiconductors and semimetals gallium nitride (GaN) I, edited by R K Willardson and A C Beer (Academic Press, San Diego, 1998) Vol. 50 p. 167
V L Solozhenho, Properties of group III nitrides edited by J H Edgar (INSPEC Publications, London, 1994)
S Kumar, S Joshi, B Joshi and S Auluck, J. Phys. Chem. Sol. 86, 101 (2015)
Z Bousahla, B Abbar, B Bouhafs and A Tadjer, J. Solid State Chem. 178, 2117 (2005)
S Mukherjee, A Nag, V Kocevski, P K Santra, M Balasubramanian, S Chattopadhyay, T Shibata, F Schaefers, J Rusz, C Gerard, O Eriksson, C U Segre and D D Sarma, Phys. Rev. B 89, 224105 (2014)
T Teshome and A Datta, J. Phys. Chem. C 121, 15169 (2017)
K Karch and F Bechstedt, Phys. Rev. B 56, 7404 (1997)
N Bouarissa and K Kassali, Phys. Status Solidi B 228, 663 (2001); 231, 294 (2002)
A F Wright, J. Appl. Phys. 82, 2833 (1997)
M Grimsditch, E S Zouboulis and A Polian, J. Appl. Phys. 76, 832 (1994)
N Bouarissa, Mater. Chem. Phys. 100, 41 (2006)
M van Schilfgaarde, A Sher and A B Chen, J. Crystal Growth 178, 8 (1997)
K Kim, W R L Lambrecht and B Segall, Phys. Rev. B 53, 16310 (1996)
M L Cohen and J R Chelikowsky, Electronic structure and optical properties of semiconductors (Springer-Verlag, Berlin, 1989)
R M Martin, Electronic structure: Basic theory and practical methods (Cambridge University Press, Cambridge, 2004)
K Kassali and N Bouarissa, Microelectron. Eng. 54, 277 (2000)
F Benmakhlouf, A Bechiri and N Bouarissa, Solid State Electron. 47, 1335 (2003)
P Harrison, Quantum wells, wires and dots, theoretical and computational physics (John Wiley & Sons, LTD, Chichester, England, 2000)
N Bouarissa, Phys. Lett. A 245, 285 (1998)
N Bouarissa, Mater. Chem. Phys. 124, 336 (2010)
J C Phillips, Bonds and bands in semiconductors (Academic Press, New York, 1973)
W A Harrison, Electronic structure and the properties of solids (W H Freeman & Co Ltd, San Francisco, 1980)
S L Richardson, M L Cohen, S G Louie and J R Chelikowsky, Phys. Rev. B 33, 1177 (1986)
N Bouarissa, Infrared Phys. Technol. 39, 265 (1998)
N Bouarissa, Mater. Chem. Phys. 65, 107 (2000)
N Bouarissa and F Annane, Mater. Sci. Eng. B 95, 100 (2002)
N V Novikov, T D Osetinskaya, A A Shul’zhenko, A P Podoba, A N Sokolov and I A Petrusha, Akad. Nauk Ukr. RSR, Ser. A: Fiz.-Tekh. Mat. Nauki 72 (1983)
L Lindsay, D A Broido and T L Reinecke, Phys. Rev. Lett. 111, 025901 (2013)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Saib, S., Bouarissa, N. The influence of temperature and composition on the crystal properties of Al\(_{1-x}\)B\(_{{x}}\)N semiconducting ternary alloys. Pramana - J Phys 96, 43 (2022). https://doi.org/10.1007/s12043-021-02275-x
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s12043-021-02275-x