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Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature

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Abstract

We have deposited relatively thick (∼60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski-Krastanov growth mode observed in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of surface free energy of the Si(111) substrate by Br-passivation. The size distribution of the Ge nanoislands has been determined. The Br-Si(111) substrates were prepared by a liquid treatment, which may not produce exactly reproducible surfaces. Nevertheless, some basic features of the nanostructural island growth are reasonably reproducible, while there are variations in the details of the island size distribution.

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Author notes

  1. Amai K Das

    Present address: Department of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong

Authors and Affiliations

  1. Institute of Physics, Sachivalaya Marg, 751 005, Bhubaneswar, India

    Amai K Das & BN Dev

  2. Paul-Drude Institute for Solid State Electronics Nanoacoustic Group, Hausvogteiplatz 5-7, D10117, Berlin, Germany

    B Sundaravel, EZ Luo, JB Xu & IH Wilson

Authors
  1. Amai K Das
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  2. BN Dev
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  3. B Sundaravel
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  4. EZ Luo
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  5. JB Xu
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  6. IH Wilson
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Corresponding author

Correspondence to BN Dev.

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Das, A.K., Dev, B., Sundaravel, B. et al. Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature. Pramana - J Phys 59, 133–142 (2002). https://doi.org/10.1007/s12043-002-0037-0

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  • DOI: https://doi.org/10.1007/s12043-002-0037-0

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