Abstract
The initial stage of growth of nanoislands prepared by thermal deposition of niobium on the reconstructed surface of Si(111)-7 × 7 in ultrahigh vacuum is experimentally investigated. The morphological and electrophysical properties of niobium-based nanostructures are studied by means of low-temperature scanning tunneling microscopy and spectroscopy. It is found that upon the deposition of niobium on a substrate at room temperature, clusters and nanoislands are formed on the silicon surface, having a characteristic lateral size of 10 nm with the metallic type of tunneling conductivity at low temperatures. Upon the deposition of niobium on a heated substrate, quasi-one-dimensional (1D) and quasi-two-dimensional (2D) structures with typical lateral dimensions of up to 200 nm and three-dimensional pyramidal islands with semiconducting type of tunneling conductivity at low temperatures are formed.
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Original Russian Text © A.V. Putilov, D.A. Muzychenko, A.Yu. Aladyshkin, 2016, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2016, No. 3, pp. 10–18.
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Putilov, A.V., Muzychenko, D.A. & Aladyshkin, A.Y. Peculiarities of the initial stage of growth of niobium-based nanostructures on a Si(111)-7 × 7 surface. J. Surf. Investig. 10, 273–281 (2016). https://doi.org/10.1134/S1027451016020178
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DOI: https://doi.org/10.1134/S1027451016020178