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Defect-induced strain-assisted surface electronic response of layered materials

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Abstract

Two-dimensionally confined nanomaterials, popularly known as layered materials, are an emerging class of novel nano-sized materials with exotic chemical and physical properties. 2D materials like graphene, MoS2 and WS2 have offered fabrication of smart nano-electronic devices in recent years. However, based on their particular application, their properties have to be tuned for specific purposes. Presently, photoelectronic applications of these materials demand fine-tuning of their work function for the design of efficient contact materials, field-emission-based devices and high catalytic response in energy evolution reaction. The work function of layered materials can be effectively modulated through defect engineering. Defects generated in these nanomaterials create strain in the crystal structure which in turn change the work function of the materials. In this work, the defect-induced strain-assisted surface electronic response of layered materials has been reviewed.

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Acknowledgements

We are thankful to AIRF, JNU, for the Raman measurements given in figure 9. We would also like to thank Jyoti Shakya and M K Kumawat for their assistance. SK sincerely thanks UGC, India, for the research fellowship.

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Authors and Affiliations

  1. School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110067, India

    Sanjeev Kumar, Tanmay Mahanta & Tanuja Mohanty

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  1. Sanjeev Kumar
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  2. Tanmay Mahanta
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  3. Tanuja Mohanty
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Correspondence to Tanuja Mohanty.

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This article is part of the Special Issue on ‘Quantum Materials and Devices’.

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Kumar, S., Mahanta, T. & Mohanty, T. Defect-induced strain-assisted surface electronic response of layered materials. Bull Mater Sci 44, 256 (2021). https://doi.org/10.1007/s12034-021-02549-5

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