Abstract
Ni films of thickness ranging from 150 to 250 nm were deposited by DC magnetron sputtering on to Si (100) substrates maintained at room temperature and followed by post-annealing at 300 and 500 °C for 30 min. Other set of Ni films were deposited on to Si (1 0 0) substrates held at annealing temperature of 300 and 500 °C for 30 min. Microstructural investigation by field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM) revealed columnar morphology with voided boundaries for films deposited at room temperature and was retained after post-deposition annealing at higher temperatures. Nickel silicide formation with isosceles triangle diffusion front was confirmed by cross-sectional high-resolution transmission electron microscopy (X-HRTEM) for post-annealed Ni films. Thin film deposited at high substrate temperatures having near-equiaxed structure found to be the best route to fabricate thin films without silicide formation.
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References
Abdul-Letif A M 2007 Physica B: Condensed Matter 388 107
Abhaya S, Amarendra G, Kalavathi S, Padma Gopalan, Kamruddin M, Tyagi A K, Sastry V S and Sundar C S 2007 Appl. Surf. Sci. 253 3799
Chang C A 1986 J. Appl. Phys. 60 1220
Chawla V, Jayaganthan R, Chawla A K and Chandra R 2008 Mater. Chem. Phys. 111 414
Chen J Z and Wu S K 2000 Thin Solid Films 339 194
Chu J P, Lai Y W, Lin T N and Wang S F 2000 Mater. Sci. Eng. A277 11
D’Heurle F M, Peterson C S, Baglin J E E, La Placa S J and Wong C Y 1984 J. Appl. Phys. 12 4208
Di Nunzio P E 2003 Phys. Rev. B68 115432
Fu Y, Du H and Zhang S 2003 Thin Solid Films 444 85
Fu Y, Du H, Huang W, Zhang S and Hu M 2004 Sens. Actuators A112 395
Fu Y, Du H, Zhang S and Ong S E 2005 Thin Solid Films 476 352
Inoue S, Sawada N and Namazu T 2009 Vacuum 83 664
Ishida A, Sato M and Miyazaki S 1999 Mater. Sci. Eng. A273 754
Johnson A D 1991 J. Micromech. Microeng. 1 34
Julies B A, Knoesen D, Pretorius R and Adams D 1999 Thin Solid Films 347 201
Kim N P and Cooley R F 1987 Thin Solid Films 153 447
Kohl M 2004 Shape memory actuators: microtechnology and MEMS series (Berlin: Springer)
Krulevitch P, Ramsey P B, Makowiecki D M, Lee A P, Northrup M A and Johnson G C 1996 Thin Solid Films 274 101
Martins R M S, Schell N, Mucklich A, Reuther H, Beckers M, Silva R J C, Pereira L and Braz Fernandes F M 2008 Appl. Phys. A91 291
Ohta A, Bhansali S, Kishimoto I and Umeda A 2000 Sens. Actuators 86 165
Poate J M, Tu K N and Mayer J W 1978 Thin films interdiffusion and reactions (Canada: Wiley-Interscience Publications)
Qiu H, Tian Y and Hashimoto M 2003 Vacuum 70 493
Sanjabi S, Cao Y Z, Sadrnezhaad S K and Barber Z H 2005 J. Vac. Sci. Technol. A23 1425
Shih C L, Lai B K, Kahn H, Philips S M and Heurer A H 2001 J. Micromech. Syst. 10 69
Stemmer S, Duscher G, Scheu S, Heuer A H and Ruhle M 1997 J. Mater. Res. 12 1734
Surbled P, Clerc C, Le Pioufle B, Ataka M and Fujita H 2001 Thin Solid Films 401 52
Takabayashi S, Tanino K and Kitagawa K 1997 Mater. Sci. Res. Int. 3 220
Vantomme A, Degroote S, Dekoster J, Langouche G and Pretorius R 1999 Appl. Phys. Lett. 74 3137
Walker J A, Gabriel K J and Mehregany M 1990 Sens. Actuators A21–23 243
Wolf R H and Heuer A H 1995 J. Micromech. Syst. 4 206
Wu S K, Chen J Z, Wu Y J, Wang J Y, Yu M N, Chen F R and Kai J J 2001 Philos. Mag. A81 1939
Wu S K, Su J J and Wang J Y 2004 Philos. Mag. A84 1209
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Geetha Priyadarshini, B., Aich, S. & Chakraborty, M. On the microstructure and interfacial properties of sputtered nickel thin film on Si (1 0 0). Bull Mater Sci 37, 1265–1273 (2014). https://doi.org/10.1007/s12034-014-0071-9
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DOI: https://doi.org/10.1007/s12034-014-0071-9