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Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

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Abstract

We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon (μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition (PECVD). Under the typical μc-Si:H deposition conditions, the concentrations of the species in the plasma are calculated and the effects of silane fraction (SF=[SiH4]/[H2+SiH4]) are investigated. The results show that SiH3 is the key precursor for μc-Si:H films growth, and other neutral radicals, such as Si2H5, Si2H4 and SiH2, may play some roles in the film deposition. With the silane fraction increasing, the precursor concentration increases, but H atom concentration decreases rapidly, which results in the lower H/SiH3 ratio.

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Authors and Affiliations

  1. Key Laboratory of Materials Physics, Education Ministry of China, College of Physics and Engineering, Zhengzhou University, Zhengzhou, 450052, China

    Bao-hua He  (何宝华), Shi-e Yang  (杨仕娥), Yong-sheng Chen  (陈永生) & Jing-xiao Lu  (卢景霄)

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  1. Bao-hua He  (何宝华)
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  2. Shi-e Yang  (杨仕娥)
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  3. Yong-sheng Chen  (陈永生)
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  4. Jing-xiao Lu  (卢景霄)
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Corresponding author

Correspondence to Shi-e Yang  (杨仕娥).

Additional information

This work has been supported by the State Key Development Program for Basic Research of China (No.2006CB202601), the National Natural Science Foundation of China (No.51007082), and the Natural Science Foundation of Henan Province (No.072300410080).

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He, Bh., Yang, Se., Chen, Ys. et al. Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD. Optoelectron. Lett. 7, 198–201 (2011). https://doi.org/10.1007/s11801-011-0127-7

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  • DOI: https://doi.org/10.1007/s11801-011-0127-7

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