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An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three-dimensional p-type buried layers

一种具有三维p型埋层的超高压4H-SiC混合PiN肖特基二极管

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Abstract

In the modern society, there is a strong demand for semiconductor chips, and the 4H polytype silicon carbide (4H-SiC) power device is a promising candidate for the next generation semiconductor chip, which can be used in various power electronic systems. In order to improve the performance of the 4H-SiC power device, a novel ultrahigh-voltage (UHV) 4H-SiC merged p-type/intrinsic/n-type (PiN) Schottky (MPS) diode with three-dimensional (3D) p-type buried layers (PBL) (3D-PBL MPS) is proposed and investigated by numerical simulation. The static forward conduction characteristics of the 3D-PBL MPS are similar to those of the conventional 4H-SiC MPS diode without the PBL (PBL-free MPS). However, when the 3D-PBL MPS is in the reverse blocking state, the 3D PBL can transfer the peak electric field (Epeak) into a deeper position in the body of the epitaxial layer, and enhance the ability of the device to shield the high electric field at the Schottky contact interface (ES), so that the reverse leakage current of the 3D-PBL MPS at 10 kV is only 0.002% of that of the PBL-free MPS. Meanwhile, the novel 3D-PBL MPS has overcome the disadvantage in the 4H-SiC MPS diode with the two-dimensional PBL (2D-PBL MPS), and the forward conduction characteristic of the 3D-PBL MPS will not get degenerated after the device converts from the reverse blocking state to the forward conduction state because of the special depletion layer variation mechanism depending on the 3D PBL. All the simulation results show that the novel UHV 3D-PBL MPS has excellent device performance.

摘要

现代社会对半导体芯片具有旺盛的需求, 而4H型碳化硅(4H-SiC)功率器件是下一代半导体芯片 中极具潜力的候选者, 可应用于各种电力电子系统。为了提高4H-SiC 功率器件的性能, 本文提出了一 种具有三维(3D) p 型埋层(PBL)的超高压(UHV) 4H-SiC 混合p 型/本征/n 型(PiN)肖特基(MPS)(3D-PBL MPS)二极管, 并进行了数值模拟仿真研究。3D-PBL MPS 的静态正向导通特性与没有PBL的传统4HSiC MPS二极管(PBL-free MPS)的相近。然而, 当3D-PBL MPS 处于反向阻断状态时, 3D PBL 可以将 峰值电场(Epeak)转移到外延层体内更深的位置, 增强器件屏蔽肖特基接触界面处高电场(ES)的能力。因 此, 3D-PBL MPS在10 kV下的反向漏电流密度仅为PBL-free MPS的0.002%。新型3D-PBL MPS也克 服了具有二维PBL的4H-SiC MPS二极管(2D-PBL MPS)的缺点。当器件从反向阻断状态转换到正向导 通状态后, 3D-PBL MPS的正向导通特性不会退化, 这是由于3D PBL具有特殊的耗尽层变化机制。所 有器件仿真结果表明, 新型UHV 3D-PBL MPS具有出色的器件性能。

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Funding

Project(F2020210016) supported by the Natural Science Foundation of Hebei, China; Project(620004153) supported by the National Natural Science Foundation of China

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Shijiazhuang Tiedao University, Shijiazhuang, 050043, China

    Shuai Yang  (杨帅), Xiao-dong Zhang  (张晓东), An Cao  (曹安) & Wen-yu Luo  (雒文瑜)

  2. School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang, 050043, China

    Guang-lei Zhang  (张光磊) & Jin-jin Zhao  (赵晋津)

  3. School of Microelectronics, Xidian University, Xi’an, 710071, China

    Bo Peng  (彭博)

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  1. Shuai Yang  (杨帅)
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Correspondence to Shuai Yang  (杨帅).

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Contributors

The overarching research goals were developed by YANG Shuai and ZHANG Guang-lei. LUO Wen-yu, ZHANG Xiao-dong and CAO An provided the device model, and analyzed the calculated results. The calculation was carried out by PENG Bo. The initial draft of the manuscript was written by YANG Shuai, LUO Wen-yu and ZHAO Jin-jin. YANG Shuai and ZHAO Jin-jin replied to reviewers’ comments and revised the final version.

Conflict of interest

YANG Shuai, ZHANG Xiao-dong, CAO An, LUO Wen-yu, ZHANG Guang-lei, PENG Bo and ZHAO Jin-jin declare that they have no conflict of interest.

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Yang, S., Zhang, Xd., Cao, A. et al. An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three-dimensional p-type buried layers. J. Cent. South Univ. 28, 3694–3704 (2021). https://doi.org/10.1007/s11771-021-4887-3

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