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1.38kV Merged Pin Schottky Rectifier for High Power Device Applications

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Abstract

In this paper, we have proposed a modified version of junction barrier schottky diode (JBS) with fused trench structure to enhance electrical properties. The device has an increased current density, low forward voltage drop, high breakdown voltage and large schottky contact area as compared to previous merged pin-junction barrier schottky diode.4H-SiC is used as a substrate and device is purely simulation based. To carry out simulation work Silvaco TCAD(ATLAS) is used. The simulated device has current density of 110 A/cm2 with schottky region having height of 2.5 μm and at a forward voltage drop of 2.5 V. The proposed device has more number of schottky contacts than the previous devices and it reduces the forward voltage drop by 20% at current density of 140 A/cm2. The output capacitance of this device, common JBS and earlier merged pin schottky diode are almost same. Moreover, the forward and reverse features of device are studied at room temperature (25 °C) as well as at higher temperatures.

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Authors and Affiliations

  1. University of Engineering and Technology, Taxila, Pakistan

    Muhammad Fayyaz

  2. Comsats Institute of Information Technology, Wah Cantt, Pakistan

    Fayyaz A. Chaudhry

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  1. Muhammad Fayyaz
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  2. Fayyaz A. Chaudhry
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Correspondence to Muhammad Fayyaz.

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Fayyaz, M., Chaudhry, F.A. 1.38kV Merged Pin Schottky Rectifier for High Power Device Applications. Silicon 11, 2711–2717 (2019). https://doi.org/10.1007/s12633-018-0060-5

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  • DOI: https://doi.org/10.1007/s12633-018-0060-5

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