Abstract
This paper presents an overall optimization procedure and the electrical performances of 1.2 kV/10 A 4H-SiC junction barrier Schottky (JBS) diodes with high current density. To achieve high current density, the epi-layer, the design parameters for active region including p-grid width and cell pitch, and the field limiting ring for edge termination were optimized with analytic calculation to estimate forward electrical performances and with Silvaco atlas™ simulator to estimate reverse electrical performances. Based on the systematic design, the JBS diodes were fabricated and electrically characterized. The experimental results showed that the breakdown voltage (BV) of JBS diode was significantly sensitive to field limiting ring (FLR) space and that the JBS diode with the ratio of pure Schottky contact area to total active area of 0.75 and the FLR space of 1.25 μm had optimum electrical performances such as a forward current density of 370 A/cm2, a reverse leakage current below 20 μA at the reverse anode voltage of 1.2 kV, and the BV of 1400 V. These were in coincidence with the simulation results within 10% error.
Similar content being viewed by others
References
B. Moxey, Bodo’s power syst. March. (2018). https://doi.org/10.1049/PBPO096E_ch2
J. Yamada, E (2017) Thal, Bodo’s power systems Sept. 20
T. Kimoto, J.A. Cooper, Fundamentals of Silicon Carbide Technology (Singapore, John Wiley & Sons Singapore Pte. Ltd, 2014), p. 10
F. Dahlquist, H. Lendenmann, M. Ostling, Mater. Sci. Forum 353–356, 683 (2001)
B. Jayant Baliga, (1996) Power semiconductor devices (PWS Publishing Company, Boston), p. 66
A.O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt, Appl. Phys. Lett. 71, 90 (1997)
I.H. Kang, M.K. Na, O. Seok, J.H. Moon, W. Bahng, N.K. Kim, H.-C. Park, C.H. Yang, J. Korean Phys. Soc. 68, 810 (2016)
I.H. Kang, M.K. Na, O. Seok, J.H. Moon, H.W. Kim, S.C. Kim, W. Bahng, N.K. Kim, H.-C. Park, C.H. Yang, J. Korean Phys. Soc. 71, 707 (2017)
D.C. Sheridan, G. Niu, J.N. Merrett, J.D. Cressler, C. Ellis, C.-C. Tin, Solid-State Elect. 44, 1367 (2000)
Acknowledgement
Research was supported by Korea Electrotechnology Research Institute (KERI) Primary research program through the National Research Council of Science and Technology (NST) funded by the Ministry of Science and ICT (MSIT) (No. 19-12-N0101-48)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Kang, I.H., Seok, O., Moon, J.H. et al. Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density. Trans. Electr. Electron. Mater. 22, 115–120 (2021). https://doi.org/10.1007/s42341-021-00291-7
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s42341-021-00291-7