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Biaxial Strain-Induced Electronic Structure and Optical Properties of SiP\(_{2}\)S Monolayer

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Abstract

The electronic and optical properties of a two-dimensional (2D) pristine SiP\(_{2}\)S monolayer under biaxial strain effect are investigated by means of density functional theory. Firstly, we have highlighted the band gap under biaxial strain. The SiP\(_{2}\)S monolayer is an indirect semiconductor material. Its obtained electronic band structures demonstrate that its band gap can be modulated by the strain. It has been observed that, when the tensile (compressive) strain increases, the band gap of the SiP\(_{2}\)S monolayer decreases (increases). Secondly, its optical properties were examined under the strain effect, from which it was explicitly shown that different absorption spectra are obtained at different strain values. Thus, the proposed material is extremely suitable for use in adjustable detectors for optoelectronic applications.

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Acknowledgements

R.C., Y.M., and B.A. acknowledge the Ankara University for high performance computing facility through the AYP (Grand No. 17A0443001) and TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). C.T. and M.C. also acknowledge for T.C. Strategy and Budget Directorate under the Project No: 2019K12-92587.

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Authors and Affiliations

  1. Department of Physics, Faculty of Sciences, Gazi University, 06500, Ankara, Turkey

    C. Tayran

  2. Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

    C. Tayran & M. Cakmak

  3. Department of Physics Engineering, Faculty of Engineering, Ankara University, 06100, Tandogan, Ankara, Turkey

    R. Caglayan, Y. Mogulkoc & B. Alkan

  4. Department of Photonics, Faculty of Applied Sciences, Gazi University, 06500, Ankara, Turkey

    M. Cakmak

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  1. C. Tayran
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Correspondence to Y. Mogulkoc.

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Tayran, C., Caglayan, R., Mogulkoc, Y. et al. Biaxial Strain-Induced Electronic Structure and Optical Properties of SiP\(_{2}\)S Monolayer. J. Electron. Mater. 50, 6253–6260 (2021). https://doi.org/10.1007/s11664-021-09137-7

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