Abstract
A high-voltage lateral double-diffused metal-oxide semiconductor with double superjunction (DSJ LDMOS) is proposed in this paper. A vertical SJ under the drain and a lateral SJ in the drift region are introduced to form a double SJ in the DSJ LDMOS. To suppress the substrate-assisted depletion effect of the lateral SJ, a charge compensation layer linearly doped from source to drain is adopted in the drift region. In off-state, the vertical SJ enhances the depletion of the substrate to improve the vertical breakdown voltage (BV) and modulates the lateral electric field to increase the lateral BV. The lateral SJ increases the lateral BV and modulates the vertical electric field to improve the vertical BV. The vertical SJ is composed of N and P pillars with different concentrations. In on-state, the lateral SJ also provides a low-resistance channel, which decreases the specific on-resistance (Ron,sp). Simulation results indicate that the BV, figure of merit (FOM), and Ron,sp of the DSJ LDMOS are 1138 V, 10.5 MW cm−2, and 103.4 mΩ cm2, respectively. The BV and FOM of the DSJ LDMOS are increased by 31.3% and 483% compared with the conventional vertical SJ LDMOS (Con. VSJ LDMOS), while the Ron,sp of the DSJ LDMOS is reduced by 70%. The “silicon limit” is thus broken by the DSJ LDMOS.
Similar content being viewed by others
References
A. Marzoughi, R. Burgos, and D. Boroyevich, IEEE Trans. Ind. Electron., 66, 1 (2018).
C.M. Hu, IEEE Trans. Electron Dev. 26, 243 (1979).
J. Deng, J. Cheng, and X.B. Chen, IEEE Electron Device Lett. 38, 1712 (2017).
L.J. Wu, Z.J. Zhang, Y. Song, H. Yang, L.M. Hu, and N. Yuan, Chin. Phys. B 26, 386 (2017).
W.T. Zhang, Z.Y. Zhan, S.K. Cheng, Y. Gu, S. Zhang, Y. Yu, X.R. Luo, Z.H. Li, M. Qiao, Z.J. Li, and B. Zhang, IEEE Electron Dev. Lett. 38, 1555 (2017).
L.J. Wu, W.T. Zhang, M. Qiao, B. Zhang, and Z.J. Li, Electron. Lett. 48, 297 (2012).
Z.J. Wang, X.H. Cheng, D.W. He, C. Xia, D.W. Xu, Y.H. Yu, D. Zhang, Y.Y. Wang, Y.Q. Lv, D.W. Gong, and K. Shao, Microelectron. Eng. 91, 102 (2012).
Z. Cao, B.X. Duan, T.T. Shi, Z.M. Dong, H.J. Guo, and Y.T. Yang, IEEE Trans. Electron Dev. 65, 2565 (2018).
X.R. Luo, Y.H. Jiang, K. Zhou, P. Wang, X.W. Wang, Q. Wang, G.L. Yao, B. Zhang, and Z.J. Li, IEEE Electron Dev. Lett. 33, 1042 (2012).
S. Yuan, B.X. Duan, H. Cai, Z. Cao, and Y. Yang, in Proceedings of IEEE ISPSD (2017), pp. 279–282.
B. Zhang, W.T. Zhang, Z.H. Li, M. Qiao, and Z.J. Li, IEEE Trans. Electron Dev. 61, 525 (2014).
L.J. Wu, H. Yang, Y.Q. Wu, B. Lei, N. Yuan, Y. Song, L.M. Hu, and Y.Y. Zhang, Superlattice Microst. 116, 262 (2018).
L.J. Wu, Y.Y. Zhang, H. Yang, Y. Song, N. Yuan, B. Lei, L.M. Hu, and Y.Q. Wu, Superlattice Microst. 123, 226 (2018).
Y. Onishi and Y. Hashimoto, Jpn. J. Appl. Phys. 54, 8 (2015).
Y. Wang, X.F. Meng, P.P. Tang, and S.F. Cui, IEEE Trans. Electron Dev. 63, 4352 (2016).
S.G. Nassif-Khalil, L.Z. Hou, and C.A.T. Salama, IEEE Trans. Electron Dev. 51, 1185 (2004).
Y. Wang, Y.J. Liu, Y.F. Wang, C.H. Yu, F. Cao, Y. Hu, and G.F. Wang, IEEE Trans. Electron Dev. 64, 3028 (2017).
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Electronic supplementary material
Below is the link to the electronic supplementary material.
Rights and permissions
About this article
Cite this article
Wu, L., Wu, Y., Zhang, Y. et al. High-Voltage Lateral Double-Diffused Metal-Oxide Semiconductor with Double Superjunction. J. Electron. Mater. 48, 2456–2462 (2019). https://doi.org/10.1007/s11664-019-07030-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-019-07030-y