Abstract
Molybdenum oxide (MoO3) thin films have been deposited using plasma-enhanced atomic layer deposition with molybdenum hexacarbonyl (Mo(CO)6) and oxygen plasma. Self-limiting growth was verified at a deposition temperature of 162°C and the growth rate was determined to be 0.76 Å/cycle. It was found that the as-deposited amorphous thin films crystallized into β- or α-MoO3 during annealing temperatures from 300°C to 400°C in air. In addition, the optical bandgap (Eg) of the amorphous MoO3 was estimated to be 4 eV by transmittance spectral analysis. Moreover, metal-insulator–semiconductor capacitors based on p-type (100) silicon substrates were fabricated to investigate the electrical properties of MoO3. It was shown that the MoO3 thin films exhibit a good dielectric performance and that the dielectric constant of the amorphous MoO3 was determined to be about 17. Additionally, a low leakage current of 6.43 × 10−7 A/cm2 at 1 V was detected and the equivalent oxide thickness was calculated to be 10.5 nm. As a result, MoO3 thin films, as a new high-κ gate dielectrics system, might be a good candidate for metal-insulator–semiconductor field-effect transistors based on two-dimensional transition metal dichalcogenides, especially for metal oxide semiconductor field-effect transistors using molybdenum disulfide (MoS2) as channel material.
Similar content being viewed by others
References
Y.-I. Ogita, S. Iehara, and T. Tomita, Thin Solid Films 430, 161 (2003).
H. Hu, C.X. Zhu, Y.F. Lu, Y.H. Wu, T. Liew, M.F. Li, B.J. Cho, W.K. Choi, and N. Yakovlev, J. Appl. Phys. 94, 551 (2003).
M.-S. Kim, Y.-D. Ko, J.-H. Hong, M.-C. Jeong, J.-M. Myoung, and I. Yun, Appl. Surf. Sci. 227, 387 (2004).
Y.H. Wu, M.Y. Yang, A. Chin, W.J. Chen, and C.M. Kwei, IEEE Electron Device Lett. 21, 341 (2000).
J.-S. Lee, W.-H. Kim, I.-K. Oh, M.-K. Kim, G. Lee, C.-W. Lee, J. Park, C.L. Matras, W. Noh, and H. Kim, Appl. Surf. Sci. 297, 16 (2014).
D.A. Buchanan, IBM J. Res. Dev. 43, 245 (1999).
J.G. Song, J. Park, W. Lee, T.J. Choi, H. Jung, and C.W. Lee, ACS Nano 7, 11333 (2013).
S. Kim, A. Konar, W.S. Hwang, J.H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Y.W. Jin, S.Y. Lee, D. Jena, W. Choi, and K. Kim, Nat. Commun. 2, 1011 (2012).
N.A. Chernova, M. Roppolo, A.C. Dillon, and M.S. Whittingham, J. Mater. Chem. 19, 2526 (2009).
J.N. Yao, K. Hashimoto, and A. Fujishima, Nature 355, 624 (1992).
J. Yu, S.J. Ippolito, M. Shafiei, D. Dhawan, W. Wlodarski, and K. Kalantar-zadeh, Appl. Phys. Lett. 94, 013504 (2009).
Z. Luo, R. Miao, T.D. Huan, I.M. Mosa, A.S. Poyraz, W. Zhong, J.E. Cloud, D.A. Kriz, S. Thanneeru, J. He, Y. Zhang, R. Ramprasad, and S.L. Sui, Adv. Energy Mater. 6, 1600528 (2016).
Y.H. Lee, X.Q. Zhang, W.J. Zhang, M.T. Chang, C.T. Lin, K.D. Chang, Y.C. Yu, J. Tse-Wei Wang, C.S. Chang, L.J. Li, and T.W. Lin, Adv. Mater. 24, 2320 (2012).
X.L. Wang, Y.J. Gong, G. Shi, W.L. Chow, K. Keyshar, G.L. Ye, R. Vajtai, J. Lou, Z. Liu, E. Ringe, B.K. Tay, and P.M. Ajayan, ACS Nano 8, 5125 (2014).
H. Ohtsuka and Y. Sakurai, Solid State Ion. 144, 59 (2001).
Y.C. Lin, W. Zhang, J.K. Huang, K.K. Liu, Y.H. Lee, C.T. Liang, C.W. Chu, and L.J. Li, Nanoscale 4, 6637 (2012).
C. Battaglia, X.T. Yin, M. Zheng, and I.D. Sharp, Nano Lett. 14, 967 (2014).
A.K. Prasad, P.I. Gouma, D.J. Kubinski, J.H. Visser, R.E. Soltis, and P.J. Schmitz, Thin Solid Films 436, 46 (2003).
T. Siciliano, A. Tepore, E. Filippo, G. Micocci, and M. Tepore, Mater. Chem. Phys. 114, 687 (2009).
K. Kalantar-zadeh, J.S. Tang, M.S. Wang, K.L. Wang, and A. Shailos, Nanoscale 2, 429 (2010).
L. Chibane, M.S. Belkaid, R. Zirmi, and A. Moussi, J. Electron. Mater. 46, 1963 (2017).
S.Y. Lin, Y.C. Chen, C.M. Wang, P.T. Hsieh, and S.C. Shih, Appl. Surf. Sci. 255, 3868 (2009).
R.M. Guerrero, J.R.V. Garcia, V. Santes, and E. Gomez, J. Alloys. Compd. 701, 434 (2007).
M.F. Al-Kuhaili, S.M.A. Durrani, and I.A. Bakhtiari, Appl. Phys. A 98, 609 (2010).
A. Bertuch, G. Sundaram, M. Saly, D. Moser, and R. Kanjolia, J. Vac. Sci. Technol. A32, 01A119 (2014).
M. Diskus, O. Nilsen, and H. Fjellvag, J. Mater. Chem. 21, 705 (2011).
M. Diskus, O. Nilsen, H. Fjellvåg, S. Diplas, P. Beato, C. Harvey, E. van Schrojenstein Lantman, and B.M. Weckhuysen, J. Vac. Sci. Technol. A30, 01A107 (2012).
H. Kim, H.-B.-R. Lee, and W.-J. Maeng, Thin Solid Films 517, 2563 (2009).
H. Kim, Thin Solid Films 519, 6639 (2011).
Y.C. Tseng, A.U. Mane, J.W. Elam, and S.B. Darling, Sol. Energy Mater. Sol. Cells 99, 235 (2012).
D.D. Yao, J.Z. Ou, K. Latham, S. Zhuiykov, A.P. O’Mullane, and K. Kalantar-zadeh, Cryst. Growth Des. 12, 1865 (2012).
J.Z. Ou, J.L. Campbell, D. Yao, W. Wlodarski, and K. Kalantar-zadeh, J. Phys. Chem. C 115, 10757 (2011).
W.K. Henson, K.Z. Ahmed, E.M. Vogel, J.R. Hauser, J.J. Wortman, R.D. Venables, M. Xu, and D. Venables, IEEE Electron Device Lett. 20, 179 (1999).
J.Y. Dai, P.F. Lee, K.H. Wong, H.L.W. Chan, and C.L. Choy, J. Appl. Phys. 94, 912 (2003).
Acknowledgement
The work was supported by the National Nature Science Foundation of China under Contract 51572043.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no conflict of interest.
Rights and permissions
About this article
Cite this article
Dai, T., Ren, Y., Qian, L. et al. Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition. J. Electron. Mater. 47, 6709–6715 (2018). https://doi.org/10.1007/s11664-018-6555-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-018-6555-4