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Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures

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Abstract

We have investigated the evolution of the strain and threading dislocation density in metamorphic compositionally and temperature-graded ZnS y Se1−y buffer layers. Linear variation in composition in conjunction with temperature grading may allow control over the relaxation process. Previously, we reported the development of a general kinetic model based on dislocation flow, which accounted for the time evolution of the strain relaxation in semiconductor structures under kinetically limited conditions, including interactions of threading and misfit defects. In this work, we studied ZnS y Se1−y /GaAs (001) heterostructures with linear compositional grading and a convex-upward (type A), linear (type B) or convex-downward (type C) temperature grading profile. The thermal budget available for relaxation in these types of structures is controlled by the temperature grading profile, made up of combinations of linear ramps and constant-temperature sections. In all cases, the temperature was varied from T 0 (400°C to 600°C) at the substrate interface to T F = 300°C at the surface. We also investigated the effect of varying the compositional gradient in the range from 0.18%/μm to 1.6%/μm. Structures with higher average temperature (greater thermal budget) and/or higher grading coefficient exhibited greater extent of relaxation and therefore reduced residual strain. Furthermore, controlling the extent of strain relaxation enabled optimization of the dislocation densities in these heterostructures.

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  1. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 4157, Storrs, CT, 06269-4157, USA

    Tedi Kujofsa & J. E. Ayers

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  1. Tedi Kujofsa
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  2. J. E. Ayers
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Correspondence to Tedi Kujofsa.

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Kujofsa, T., Ayers, J.E. Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures. J. Electron. Mater. 45, 4580–4586 (2016). https://doi.org/10.1007/s11664-016-4659-2

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