Abstract
This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form In2O3/Cu/SiO2 were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an In2O3 phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of In2O3/Cu/SiO2 improved the resistivity, adhesion to SiO2, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits.
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Acknowledgement
This work is supported by the National Science Council of Republic of China for financial support under Research Grant No. NSC 94-2622-E-150-029-CC3.
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Fang, J.S., Hsieh, H.Y. Structural and Passivative Behaviors of Cu(In) Thin Film. J. Electron. Mater. 36, 129–135 (2007). https://doi.org/10.1007/s11664-006-0017-0
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DOI: https://doi.org/10.1007/s11664-006-0017-0