Abstract
Reactive ion etching (RIE) was performed on GaN and BN thin films using chlorine-based plasmas. The optimum chemistry was found to be BCl3/Cl2/N2/Ar and Cl2/Ar at 30 and 40 mtorr for GaN and BN etching, respectively. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analysis of the GaN and BN etched surfaces show a decrease in the surface nitrogen atomic composition and an increase in chlorine impurity incorporation with increasing self-dc bias. A photo-assisted RIE (PA-PIE) process using an IR filtered Xe lamp beam was then used and resulted in improved etch rates and surface composition. Optical emission spectroscopy (OES) measurements have also shown photoenhancement of the etch process.
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Medelci, N., Tempez, A., Starikov, D. et al. Etch characteristics of GaN and BN materials in chlorine-based plasmas. J. Electron. Mater. 29, 1079–1083 (2000). https://doi.org/10.1007/s11664-004-0268-6
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DOI: https://doi.org/10.1007/s11664-004-0268-6