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Growth Kinetics of Ni3Sn4 in the Solid–Liquid Interfacial Reaction

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Abstract

A kinetic model of Ni3Sn4 growth in a solid (Ni)–liquid (Sn solution saturated with Ni) interfacial reaction was established, and a kinetic equation of \( l^{\text{IMC}} = 0.58\sqrt {\tilde{D}t} \) was derived, which coincided with the experimental parabolic growth behavior. The Ni-Sn interdiffusion coefficient in Ni3Sn4 (\( \tilde{D} \)) was obtained as \( \tilde{D} = 7.61 \times 10^{ - 12} \exp \left( { - \frac{{24.76\; {\text{kJ}}/{\text{mol}}}}{RT}} \right) \) by combining the kinetic equation with kinetic experiments conducted at different temperatures. The developed model can predict the thickness of the Ni3Sn4 layer well.

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Fig. 1
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Abbreviations

IMC:

Intermetallic compound

UBM:

Under bump metallization

X Ni/IMCSn :

Mole fraction of Sn atoms at Ni side of Ni3Sn4/Ni interface, dimensionless

X IMC/NiSn :

Mole fraction of Sn atoms at Ni3Sn4 side of Ni3Sn4/Ni interface, dimensionless

X IMC/SnSn :

Mole fraction of Sn atoms at Ni3Sn4 side of Ni3Sn4/Sn interface, dimensionless

X Sn/IMCSn :

Mole fraction of Sn atoms at Sn side of Ni3Sn4/Sn interface, dimensionless

X Ni/IMCNi :

Mole fraction of Ni atoms at Ni side of Ni3Sn4/Ni interface, dimensionless

X IMC/NiNi :

Mole fraction of Ni atoms at Ni3Sn4 side of Ni3Sn4/Ni interface, dimensionless

X IMC/SnNi :

Mole fraction of Ni atoms at Ni3Sn4 side of Ni3Sn4/Sn interface, dimensionless

X Sn/IMCNi :

Mole fraction of Ni atoms at Sn side of Ni3Sn4/Sn interface, dimensionless

ΔX IMCSn :

Mole fraction difference of Sn atoms at the two sides of Ni3Sn4

X IMCNi :

Mole fraction of Ni atoms in Ni3Sn4, dimensionless

X IMCSn :

Mole fraction of Sn atoms in Ni3Sn4, dimensionless

\( \tilde{D} \) :

Ni-Sn interdiffusion coefficient in Ni3Sn4, m2/s

D IMCNi :

Intrinsic diffusion coefficient of Ni atoms in Ni3Sn4, m2/s

D IMCSn :

Intrinsic diffusion coefficient of Sn atoms in Ni3Sn4, m2/s

V IMCm :

Molar volume of Ni3Sn4, m3/mol

V Nim :

Molar volume of Ni, m3/mol

t :

Reaction time, s

A :

Area of Ni3Sn4

x 1 :

Position coordinate of Ni3Sn4/Ni interface at time t, m

x 2 :

Position coordinate of Ni3Sn4/Sn interface at time t, m

\( l_{1} \) :

Growth thickness of Ni3Sn4 layer at Ni3Sn4/Ni interface side at time t, contrary to x1 in numerical, m

\( l_{2} \) :

Growth thickness of Ni3Sn4 layer at Ni3Sn4/Sn interface side at time t, equal to x2 in numerical, m

k 1, k 2, H :

Constant

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This work is supported by the National Nature Science Foundation of China under Grant No. 51474026.

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Authors and Affiliations

  1. School of Materials Science and Engineering, University of Science and Technology Beijing (USTB), Beijing, 100083, China

    Yue Wang, Jihua Huang, Zheng Ye, Xianwen Peng, Jian Yang, Shuhai Chen & Xingke Zhao

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  1. Yue Wang
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Manuscript submitted January 16, 2019.

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Wang, Y., Huang, J., Ye, Z. et al. Growth Kinetics of Ni3Sn4 in the Solid–Liquid Interfacial Reaction. Metall Mater Trans A 50, 3038–3043 (2019). https://doi.org/10.1007/s11661-019-05259-0

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