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Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology

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Abstract

Flip-chip interconnection technology plays a key role in today’s electronics packaging. Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni1−x,Cux)3Sn4 was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni1−x,Cux)3Sn4 was next to the Ni/Cu UBM. The islandlike (Cu1−y,Niy)6Sn5 intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

    Chien-Sheng Huang & Jenq-Gong Duh

  2. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan

    Yen-Ming Chen

  3. Chunghwa Telecom Co., Ltd. Yang-Mei, Taoyuan, Taiwan

    Jyh-Hwa Wang

Authors
  1. Chien-Sheng Huang
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  2. Jenq-Gong Duh
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  3. Yen-Ming Chen
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  4. Jyh-Hwa Wang
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Huang, CS., Duh, JG., Chen, YM. et al. Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology. J. Electron. Mater. 32, 89–94 (2003). https://doi.org/10.1007/s11664-003-0241-9

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  • DOI: https://doi.org/10.1007/s11664-003-0241-9

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