Abstract
In this study, electron energy relaxation mechanisms in HEMT structures with different In x Ga1−x N-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < T e < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs.
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Acknowledgments
This work is supported by the State Planning Organization of Turkey under Grant No. 2001K120590, by the European Union under the projects EU-PHOME and EU-ECONAM, and TUBITAK under the Project Nos. 106E198, 107A004, 107A012, and 113F277. One of the authors (Ekmel Ozbay) acknowledges partial support from the Turkish Academy of Sciences. Authors, (Beyza Sarikavak-Lisesivdin and Sefer Bora Lisesivdin) acknowledge partial support from the TUBITAK 2219 numbered scholarships. We would like to thank the NANOTAM engineers for their help.
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Manuscript submitted April 16, 2014.
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Sarikavak-Lisesivdin, B., Lisesivdin, S.B., Balkan, N. et al. Energy Relaxation of Electrons in InGaN Quantum Wells. Metall Mater Trans A 46, 1565–1569 (2015). https://doi.org/10.1007/s11661-015-2762-2
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DOI: https://doi.org/10.1007/s11661-015-2762-2