Skip to main content
SpringerLink
Log in

Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Using the Shubnikov–de Haas effect, the dependences of electron effective mass m* and transport and quantum momentum relaxation times in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pseudomorphic quantum wells with one-sided silicon δ-doping on the electron density in the range of (1.1–2.6) × 1012 cm–2 have been established. Nonparabolicity coefficient m* in the linear approximation was found to be 0.133m0/eV. Both the transport and quantum momentum relaxation times depend nonmonotonically on Hall electron density nH, which is related to the competition between growth mechanisms of the Fermi momentum and the increasing contribution of large-angle scattering with increasing donor concentration.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. X. Cao, Y. Zeng, M. Kong, L. Pan, B. Wang, Z. Zhu, X. Wang, Y. Chang, and J. Chu, J. Cryst. Growth 231, 520 (2001).

    Article  ADS  Google Scholar 

  2. E. Litwin-Staszewska, F. Kobbi, M. Kamal-Saadi, D. Dur, C. Skierbiszewski, H. Sibari, K. Zekentes, V. Mosser, A. Raymond, W. Knap, and J. L. Robert, Solid-State Electron. 37, 665 (1994).

    Article  ADS  Google Scholar 

  3. S. Ahmed, K. D. Holland, N. Paydavosi, C. M. S. Rogers, A. U. Alam, N. Neophytou, D. Kienle, and M. Vaidyanathan, IEEE Trans. Nanotechnol. 11, 1160 (2012).

    Article  ADS  Google Scholar 

  4. A. B. Pashkovskii, Sov. Phys. Semicond. 25, 1312 (1991).

    Google Scholar 

  5. A. Babiński, J. Siwiec-Matuszyk, J. M. Baranowski, G. Li, and C. Jagadish, Appl. Phys. Lett. 77, 999 (2000).

    Article  ADS  Google Scholar 

  6. L. H. Dmowski, A. Zduniak, E. Litwin-Staszewska, S. Contreras, W. Knap, and J. L. Robert, Phys. Status Solidi B 198, 283 (1996).

    Article  ADS  Google Scholar 

  7. V. A. Kulbachinskii, L. N. Oveshnikov, R. A. Lunin, N. A. Yuzeeva, G. B. Galiev, E. A. Klimov, and P. P. Maltsev, Semiconductors 49, 199 (2015).

    Article  ADS  Google Scholar 

  8. E. Diez, Y. P. Chen, S. Avesque, M. Hilke, E. Peled, D. Shahar, J. M. Cervero, D. L. Sivco, and A. Y. Cho, Appl. Phys. Lett. 88, 052107 (2006).

    Article  ADS  Google Scholar 

  9. D. A. Safonov, A. N. Vinichenko, N. I. Kargin, and I. S. Vasil’evskii, Semiconductors 52, 189 (2018).

    Article  ADS  Google Scholar 

  10. D. Yu. Protasov and K. S. Zhuravlev, Solid-State Electron. 129, 66 (2017).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National Research Nuclear University MEPhI, Moscow, 115409, Russia

    D. A. Safonov, A. N. Vinichenko, N. I. Kargin & I. S. Vasil’evskii

  2. Baltic Federal University, Kaliningrad, 236041, Russia

    A. N. Vinichenko

Authors
  1. D. A. Safonov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. N. Vinichenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. I. Kargin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. I. S. Vasil’evskii
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to D. A. Safonov.

Additional information

Original Russian Text © D.A. Safonov, A.N. Vinichenko, N.I. Kargin, I.S. Vasil’evskii, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 24, pp. 120–127.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Safonov, D.A., Vinichenko, A.N., Kargin, N.I. et al. Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density. Tech. Phys. Lett. 44, 1174–1176 (2018). https://doi.org/10.1134/S1063785018120556

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785018120556

Search

Navigation