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Mobility of Dirac electrons in HgTe quantum wells

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Abstract

The mobility of Dirac electrons (DEs) in HgTe quantum wells with the thickness close to the critical value corresponding to the transition from the direct to inverted spectrum has been studied experimentally and theoretically. The nonmonotonic dependence of this mobility on the electron density is found experimentally. The theory of DE scattering on impurities and fluctuations of the thickness of a well caused by its roughnesses is elaborated. This theory is in good agreement with experiment and explains the observed nonmonotonicity by the decrease in the ratio of the de Broglie wavelength of DEs to the characteristic size of the roughness with the increase in their concentration.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. A. Dobretsova, Z. D. Kvon, L. S. Braginskii, M. V. Entin & N. N. Mikhailov

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    A. A. Dobretsova, Z. D. Kvon, L. S. Braginskii, M. V. Entin & N. N. Mikhailov

Authors
  1. A. A. Dobretsova
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  2. Z. D. Kvon
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  3. L. S. Braginskii
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  4. M. V. Entin
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  5. N. N. Mikhailov
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Correspondence to A. A. Dobretsova.

Additional information

Original Russian Text © A.A. Dobretsova, Z.D. Kvon, L.S. Braginskii, M.V. Entin, N.N. Mikhailov, 2016, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2016, Vol. 104, No. 6, pp. 402–405.

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Dobretsova, A.A., Kvon, Z.D., Braginskii, L.S. et al. Mobility of Dirac electrons in HgTe quantum wells. Jetp Lett. 104, 388–391 (2016). https://doi.org/10.1134/S0021364016180089

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  • DOI: https://doi.org/10.1134/S0021364016180089

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