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Morphological, photovoltaic, and electron transport properties of In2O3-based DSSC with different concentrations of MWCNTs

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Abstract

This study focuses on the influence of loading MWCNTs in In2O3-based DSSCs. In2O3-MWCNTs were prepared by sol-gel method via spin coating technique and annealed at 450 °C. The structural, morphology, and electrical properties of the photoanodes were characterized by means of XRD, AFM and FESEM, and J-V curve measurement and EIS properties, respectively. Incorporation of MWCNTs in In2O3 improved the J sc and V oc of the cell. However, excess loading of MWCNTs in In2O3 caused a serious aggregation of MWCNTs that increased the recombination rate. Thus, In2O3-MWCNTs with 0.3 % of MWCNTs achieved the highest PCE of 1.23 % with large surface area for efficient dye adsorption. Moreover, In2O3-MWCNTs(0.3%) exhibited large D eff about 25.7 × 10−3 cm2 s−1 with low recombination effect that increased the PCE. This study suggests an optimum MWCNT incorporation of 0.3 % in the photoanode by sol-gel synthesis method of developing In2O3-based nanocomposite.

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Acknowledgments

This work was supported by Exploratory Research Grants Scheme (ERGS/1/2013/TK07/UKM/03/2) and Photonic Technology Laboratory, Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia.

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Authors and Affiliations

  1. Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, Malaysia

    H. Abdullah & S. Mahalingam

  2. Unit Pengajian Asas Kejuruteraan UPAK, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, Malaysia

    I. Ashaari

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Correspondence to H. Abdullah.

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Abdullah, H., Mahalingam, S. & Ashaari, I. Morphological, photovoltaic, and electron transport properties of In2O3-based DSSC with different concentrations of MWCNTs. Ionics 22, 2499–2510 (2016). https://doi.org/10.1007/s11581-016-1776-0

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  • DOI: https://doi.org/10.1007/s11581-016-1776-0

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