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Highly Efficient Semiconductor-Based Metasurface for Photoelectrochemical Water Splitting: Broadband Light Perfect Absorption with Dimensions Smaller than the Diffusion Length

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Abstract

In this paper, we demonstrate a highly efficient light trapping design that is made of a metal-oxide-semiconductor-semiconductor (nanograting/nanopatch) (MOSSg/p) four-layer design to absorb light in a broad wavelength regime in dimensions smaller than the hole diffusion length of the active layer. For this aim, we first adopt a modeling approach based on the transfer matrix method (TMM) to find out the absorption bandwidth (BW) limits of a simple hematite (α-Fe2O3)-based metal-oxide-semiconductor (MOS) cavity design. Our modeling findings show that this design architecture can provide near-perfect absorption in shorter wavelengths. To extend the absorption toward longer wavelengths, a nanostructured semiconductor is placed on top of this MOS design. This nanostructure supports the Mie resonance and adds a new resonance in longer wavelengths without disrupting the lower wavelength absorption capability of MOS cavity. By this way, a polarization-insensitive absorption above 0.8 can be acquired up to λ=565 nm. Moreover, to have a better qualitative comparison, the water-splitting photocurrent of this design has been estimated. Our calculations show that a photocurrent as high as 10.6 mA cm−2 can be achieved with this design that is quite close to the theoretical limit of 12.5 mA cm−2 for hematite-based water-splitting photoanode. This paper proposes a design approach in which the superposition of cavity modes and Mie resonances can lead to a broadband, polarization-insensitive, and omnidirectional near-perfect light absorption in dimensions smaller than the carrier’s diffusion length. This can be considered as a winning strategy to design highly efficient and ultrathin optoelectronic designs in a variety of applications including photoelectrochemical water splitting and photovoltaics.

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Funding

This work is supported by the Scientific and Technological Research Council of Turkey (TUBITAK), grant number 215Z249. This work is supported by the projects DPT-HAMIT and TUBITAK under Project Nos. 113E331, 114E374, and 115F560. One of the authors (E. O.) also acknowledges partial support from the Turkish Academy of Sciences.

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Authors and Affiliations

  1. UNAM–National Nanotechnology Research Center, Bilkent University, 06800, Ankara, Turkey

    Amir Ghobadi, Turkan Gamze Ulusoy Ghobadi, Ferdi Karadas & Ekmel Ozbay

  2. NANOTAM - Nanotechnology Research Center, Bilkent University, 06800, Ankara, Turkey

    Amir Ghobadi & Ekmel Ozbay

  3. Department of Electrical and Electronics Engineering, Bilkent University, 06800, Ankara, Turkey

    Amir Ghobadi & Ekmel Ozbay

  4. Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara, Turkey

    Turkan Gamze Ulusoy Ghobadi

  5. Department of Energy Engineering, Faculty of Engineering, Ankara University, 06830, Ankara, Turkey

    Turkan Gamze Ulusoy Ghobadi

  6. Department of Chemistry, Bilkent University, 06800, Ankara, Turkey

    Ferdi Karadas

  7. Department of Physics, Bilkent University, 06800, Ankara, Turkey

    Ekmel Ozbay

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  1. Amir Ghobadi
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  2. Turkan Gamze Ulusoy Ghobadi
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  4. Ekmel Ozbay
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Ghobadi, A., Ghobadi, T.G.U., Karadas, F. et al. Highly Efficient Semiconductor-Based Metasurface for Photoelectrochemical Water Splitting: Broadband Light Perfect Absorption with Dimensions Smaller than the Diffusion Length. Plasmonics 15, 829–839 (2020). https://doi.org/10.1007/s11468-019-01095-5

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