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Electronic structure of LaIrIn5 and f-electron character in its related Ce-115 compounds

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Abstract

LaIrIn5 is a reference compound of the heavy-fermion superconductor CeIrIn5. The lack of f electrons in LaIrIn5 indicates that there should not be any f electron participating in the construction of its Fermi surface. Thus the electronic structure comparison between LaIrIn5 and CeIrIn5 provides a good platform to study the properties of f electrons. Here angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations are performed to study the electronic structures of LaIrIn5 and CeIrIn5. We find the valence band structures of the two materials are similar to each other, except for the absence of f bands in LaIrIn5. By analyzing the Fermi crossings of the three conduction bands of the two materials quantitatively, we find the volumes of the electron pockets α and β around the M′ point become larger from LaIrIn5 to CeIrIn5, while the hole pocket γ around the Γ′ point becomes smaller. Together with the calculation results, we confirm that this is mainly originated from the f-electron contribution, while the lattice-constant difference between LaIrIn5 and CeIrIn5 only has a finite influence. We also give a summary of the f-electron character in its related Ce-115 heavy fermion compounds. Our results may be essential for the complete microscopic understanding of the 115 compounds and the related heavy-fermion systems.

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Author notes

  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang, 621908, China

    Rui Zhou, XueBing Luo, XingYu Ji, Yun Zhang & QiuYun Chen

  2. Department of Engineering Physics, Tsinghua University, Beijing, 100084, China

    Rui Zhou

  3. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China

    ZhaoFeng Ding, Lei Shu & ZiHao Zhu

  4. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China

    YaoBo Huang

  5. Center of Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    DaWei Shen, ZhengTai Liu & ZhongHao Liu

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  1. Rui Zhou
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  2. XueBing Luo
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  11. Yun Zhang
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Corresponding authors

Correspondence to Yun Zhang or QiuYun Chen.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11874330, 11774320, U1630248, and 11904334), the National Key Research and Development Program of China (Grant No. 2017YFA0303104), the National Key R&D Program of the MOST of China (Grant No. 2016YFA0300204), the special fund from Institute of Materials, CAEP (Grant No. TP02201904), the Equipment development fund (Grant No. JZX7Y201901SY00900107) and the Science Challenge Project (Grant No. TZ2016004). Part of this research used Beamline 03U of the Shanghai Synchron Radiation Facility, which is supported by ME2 project under contract No. 11227902 from National Natural Science Foundation of China. DaWei Shen was supported by “Award for Outstanding Member in Youth Innovation Promotion Association CAS”

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Zhou, R., Luo, X., Ding, Z. et al. Electronic structure of LaIrIn5 and f-electron character in its related Ce-115 compounds. Sci. China Phys. Mech. Astron. 63, 117012 (2020). https://doi.org/10.1007/s11433-019-1564-6

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  • DOI: https://doi.org/10.1007/s11433-019-1564-6

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