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Electronic structure and optical property of boron doped semiconducting graphene nanoribbons

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Abstract

We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation density, Mulliken popular and optical spectra are considered to show the special electronic structure of boron doped semiconducting graphene nanoribbons. The C-B bond form is discussed in detail. From our analysis it is concluded that the Fermi energy of boron doped semiconducting graphene nanoribbons gets lower than that of intrinsic semiconducting graphene nanoribbons. Our results also show that the boron doped semiconducting graphene nanoribbons behave as p-type semiconducting and that the absorption coefficient of boron doped armchair graphene nanoribbons is generally enhanced between 2.0 eV and 3.3 eV. Therefore, our results have a great significance in developing nano-material for fabricating the nano-photovoltaic devices.

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Authors and Affiliations

  1. School of New Energy Engineering, Leshan Vocational & Technical College, Leshan, 614000, China

    AQing Chen, Li Wang & Feng Deng

  2. Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, China

    QingYi Shao

Authors
  1. AQing Chen
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  2. QingYi Shao
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  3. Li Wang
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  4. Feng Deng
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Correspondence to QingYi Shao.

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Chen, A., Shao, Q., Wang, L. et al. Electronic structure and optical property of boron doped semiconducting graphene nanoribbons. Sci. China Phys. Mech. Astron. 54, 1438–1442 (2011). https://doi.org/10.1007/s11433-011-4408-8

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  • DOI: https://doi.org/10.1007/s11433-011-4408-8

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