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Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

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Abstract

The single-photon absorption induced single event transient in the silicon-germanium heterojunction bipolar transistor is investigated. The laser wavelength and bias condition have been proven to have significant impacts on the characterization of the single event transient (SET) response of the device by two-dimensional (2-D) raster scanning. After optical analytical calculation, the laser-induced charge distribution is well-embedded in the 3-D TCAD process simulation conducted to explore the underlying physical mechanism. In addition to the ion shunt effect, the excess electron injection from the emitter to the base could play a vital role in the SET peak amplitude and charge collection. The impact of the metal layer on the SPA experimental results is also determined by establishing a figure of merit that will help researchers estimate the laser-induced transient sensitivity of devices with metal layer blocking.

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Authors and Affiliations

  1. The Key Laboratory of Particle and Radiation Imaging, Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing, 100084, China

    XiaoYu Pan & YiNong Liu

  2. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, 710024, China

    XiaoYu Pan, HongXia Guo, YinHong Luo, FengQi Zhang, Tan Wang, Wen Zhao, LiLi Ding & JingYan Xu

  3. School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China

    HongXia Guo & YaHui Feng

  4. School of Aerospace Science and Technology, Xidian University, Xi’an, 710126, China

    JinXin Zhang

  5. The 38th Research Institute of China Electronics Technology Group Corporation, Hefei, 230088, China

    Zhuang Li

Authors
  1. XiaoYu Pan
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  2. HongXia Guo
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  3. YaHui Feng
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  4. YiNong Liu
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  5. JinXin Zhang
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  6. Zhuang Li
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  7. YinHong Luo
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  8. FengQi Zhang
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  9. Tan Wang
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  10. Wen Zhao
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  11. LiLi Ding
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  12. JingYan Xu
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Corresponding authors

Correspondence to XiaoYu Pan or HongXia Guo.

Additional information

The authors would like to thank the contributions of the Institute of Microelectronics, Tsinghua University, for providing the DUT in this work. Sun Yabin and Fu Jun have also provided many valuable suggestions on the process simulation. The authors and Shangguan Shipeng from NSSC have carried out many meaningful discussions on the pulsed laser’s application. What is more, the authors are very grateful to the engineers of SPELS and EKSPLA for their technical support on the daily use of the laser system.

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Pan, X., Guo, H., Feng, Y. et al. Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation. Sci. China Technol. Sci. 65, 1193–1205 (2022). https://doi.org/10.1007/s11431-021-2013-1

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  • DOI: https://doi.org/10.1007/s11431-021-2013-1

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