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Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation

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Abstract

The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor (SiGe HBT). The temporal information of the proton-induced current transients is first measured and then compared with results from heavy ion microbeam experiment. Additionally, a model for proton-induced charge collection based on Geant4 Monte Carlo simulation tools is constructed by using the information from heavy ion experiment and 3D TCAD simulation. The results obtained by the validated model exhibit good consistency with the proton experiment.

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Authors and Affiliations

  1. School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, China

    JiaNan Wei, Yang Li, WeiTao Yang, ChaoHui He, YongHong Li, Hang Zang & Pei Li

  2. School of Aerospace Science and Technology, Xidian University, Xi’an, 710126, China

    JinXin Zhang

  3. National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing, 102413, China

    Gang Guo

Authors
  1. JiaNan Wei
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  2. Yang Li
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  3. WeiTao Yang
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  4. ChaoHui He
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  5. YongHong Li
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  6. Hang Zang
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  7. Pei Li
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  8. JinXin Zhang
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  9. Gang Guo
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Corresponding author

Correspondence to ChaoHui He.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11775167, 61574171 and 11575138). The authors would like to thank the staffs of CIAE for the help during proton irradiation experiment.

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Wei, J., Li, Y., Yang, W. et al. Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation. Sci. China Technol. Sci. 63, 851–858 (2020). https://doi.org/10.1007/s11431-019-1474-x

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  • DOI: https://doi.org/10.1007/s11431-019-1474-x

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