Abstract
Hf x Al(1−x)O film grown by atomic layer deposition (ALD) on n-type 4H-SiC (0001) epitaxial layer has been studied. Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm, high dielectric constant of 16.3 and low gate leakage current of 2.47×10−5 A/cm2 at E=5 MV/cm, which makes ALD Hf x Al(1−x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.
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Song, Q., Zhang, Y., Zhang, Y. et al. Atomic layer deposited high-k Hf x Al(1−x)O as an alternative gate dielectric for 4H-SiC MIS based transistors. Sci. China Technol. Sci. 55, 606–609 (2012). https://doi.org/10.1007/s11431-011-4697-1
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DOI: https://doi.org/10.1007/s11431-011-4697-1