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Atomic Layer Deposition for Semiconductors

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Abstract

The type of metal precursors and oxygen sources in atomic layer deposition (ALD) crucially affect the bulk properties of high-k gate dielectric films and the interface properties with a substrate, which determines the performance and reliability of logic devices. In this chapter, we review the effect of the assorted metal precursors, such as HfCl4, (HfN(CH3)2)4, Hf(N(C2H5)(CH3))4, and HfOtBu(NEtMe)3 on the various film properties, focusing on the film growth behavior, impurity level, and interface properties. The influences of oxygen sources type, H2O and O3, are also covered. The combination of ALD high-k film with high-mobility Ge or III–V compound semiconductors results in even more complicated interface reactions as compared to the conventional Si substrate, which is also discussed. Finally, various state-of-the-art devices with ALD high-k film such as Ge and III–Vs-based metal–oxide–semiconductor field effect transistors (MOSFETs) and three-dimensional MOSFETs are introduced, and their reliability characteristics are discussed.

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Authors and Affiliations

  1. Imec, Kapeldreef 75,, 3001, Leuven, Belgium

    Jeong Hwan Han, Moonju Cho & Annelies Delabie

  2. Department of Chemistry, University of Leuven, Celestijnenlaan 200F,, 3001, Leuven, Belgium

    Annelies Delabie

  3. Department of Materials Engineering, Hanyang University, Ansan, 426-791, Korea

    Tae Joo Park

  4. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea

    Cheol Seong Hwang

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    Choel Seong Hwang

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Han, J.H., Cho, M., Delabie, A., Park, T.J., Hwang, C.S. (2014). Front End of the Line Process. In: Hwang, C. (eds) Atomic Layer Deposition for Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-8054-9_7

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