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Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method

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Abstract

The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The thin films showed a perovskite phase and dense microstructure. The 2P r and 2V c of the Bi3.25La0.75Ti3O12 thin films annealed at 700°C were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1 × 1010 cycles, the P r value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively.

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Authors and Affiliations

  1. Department of Physics, Wuhan University, Wuhan, 430072, China

    Guo DongYun, Li MeiYa, Pei Ling, Yu BenFang, Wu GengZhu & Zhao XingZhong

  2. Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

    Wang YunBo & Yu Jun

Authors
  1. Guo DongYun
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  2. Li MeiYa
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  3. Pei Ling
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  4. Yu BenFang
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  5. Wu GengZhu
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  6. Zhao XingZhong
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  7. Wang YunBo
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  8. Yu Jun
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Corresponding author

Correspondence to Guo DongYun.

Additional information

Supported by the Natural Science Foundation of Hubei Province (Grant Nos. 2003ABA061, 2004ABA082)

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Guo, D., Li, M., Pei, L. et al. Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method. SCI CHINA SER E 50, 1–6 (2007). https://doi.org/10.1007/s11431-007-0011-7

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  • DOI: https://doi.org/10.1007/s11431-007-0011-7

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