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Microstructure and electrical properties of ferroelectric Bi3.15Nd0.85Ti3O12/BiFeO3/Bi3.15Nd0.85Ti3O12 trilayered thin films on Pt/Ti/SiO2/Si

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Abstract

Dense Bi3.15Nd0.85Ti3O12 (BNdT)/BiFeO3/BNdT trilayered ferroelectric thin films were grown on Pt/Ti/SiO2/Si by the sol–gel method. Cross-sectional transmission electron microscopy investigations revealed that the trilayered thin films exhibited smooth surface morphology and well crystallized microstructure with random orientations. The BNdT layer in the bottom consists of large columnar grains while the top BNdT layer exhibits platelike grains with small size. The remanent polarization and coercive field of the as-prepared films were determined as 34.1 µC/cm2 and 49.6 kV/cm, respectively. The conducting behavior of the trilayered films was dominated by the space-charge-limited current mechanism both in positive bias and negative bias up to 180 kV/cm, while the leakage behavior also followed the Fowler–Nordheim tunneling model in the high electric field region (>74.2 kV/cm).

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Acknowledgements

This work was supported by the Research Project in Hubei University of Education (No. XK2016SS10).

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Authors and Affiliations

  1. Department of Mechanical and Electrical Engineering, Institute of Information Science and Technology, Hubei University of Education, Wuhan, 430205, People’s Republic of China

    Hongyan Qi, Huaixin Wang, Xiaojun Xu, Yu Tang, Pengcheng Xiao & Ming Xiao

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  1. Hongyan Qi
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  2. Huaixin Wang
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  3. Xiaojun Xu
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  4. Yu Tang
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  5. Pengcheng Xiao
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Correspondence to Hongyan Qi.

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Qi, H., Wang, H., Xu, X. et al. Microstructure and electrical properties of ferroelectric Bi3.15Nd0.85Ti3O12/BiFeO3/Bi3.15Nd0.85Ti3O12 trilayered thin films on Pt/Ti/SiO2/Si. J Mater Sci: Mater Electron 28, 13757–13762 (2017). https://doi.org/10.1007/s10854-017-7220-z

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  • DOI: https://doi.org/10.1007/s10854-017-7220-z

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