Abstract
Interactions of O2 or H2O with a GaP(111) surface were investigated over wide ranges of pressure and temperature using near-ambient pressure X-ray photoelectron spectroscopy. We demonstrated the formation of several oxygen-containing species from the dissociative adsorption of gas-phase molecules onto GaP(111). Chemical evolutions were determined at the gas/semiconductor interfaces based on changes in the high-resolution photoelectron spectra, which allowed us to identify the final products formed either directly or through intermediate species. We then used the Ga 2p3/2 spectra to create maps of the relative abundances of surface oxides and hydroxyl groups present under various experimental conditions. In the case of the O2/GaP(111) interface, we detected Ga–P bonds, and various oxygen-containing species, i.e., Ga2O, Ga2O3, and GaPOm. In the case of the H2O/GaP(111) interface, in addition to the detection of Ga–P bonds, species were formed with a different extent of oxidation and hydroxylation, On–Ga–(OH)3−n, via a Ga2O-like intermediate species. In both cases, the co-existence of multiple species represented as (GaPO)A or (GaPOH)B, was displayed under specific conditions.
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unpublished data.
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Acknowledgments
This material is based upon work supported by the U.S. Department of Energy Office of Science, Office of Basic Energy Sciences under Award Number DE-FC02-04ER15533. This is contribution number NDRL 5069 from the Notre Dame Radiation Laboratory. The authors would like to thank James Kapaldo for creating the two maps using the MATLAB software.
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Zhang, X., Ptasinska, S. Heterogeneous Oxygen-Containing Species Formed via Oxygen or Water Dissociative Adsorption onto a Gallium Phosphide Surface. Top Catal 59, 564–573 (2016). https://doi.org/10.1007/s11244-015-0526-2
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DOI: https://doi.org/10.1007/s11244-015-0526-2