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A comparative DFT study of the effect of doping atoms of groups III, IV, and V on the electronic properties of phosphorene

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Abstract

The electronic, structural, and physical properties such as bond length, angles, Mulliken atomic charges, dipole moments, density of states, projector density of states, chemical potential, chemical hardness, global softness, electrophilicity index natural bond orbital, and quantum theory of atoms in the molecule analysis of phosphorene and its doped forms with the elements of groups III, IV, and V have been investigated by density functional theory. These calculations indicated that average bond lengths increase up to down in the groups. B-doped phosphorene has the lowest band gap. There are no considerable changes in dipole moments of doped phosphorene with respect to the pristine one. Ga- and In-doped phosphorenes have the largest reactivity. The E(2) values for the delocalization of the electrons between the bonds and doped atoms of group III are larger than those of groups IV and V. The calculated results state that doping decreases chemical potential with respect to the pure phosphorene, which means that doped atoms increase the reactivity.

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The datasets generated during and/or analyzed during the current study are not publicly available due to a large size of the data but are available from the corresponding author on reasonable request.

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References

  1. Guo S, Yuan L, Liu X, Zhou W, Song X, Zhang S (2017) First-principles study of SO2 sensors based on phosphorene and its isoelectronic counterparts: GeS. GeSe, SnS, SnSe Chemical Physics Letters 686:83–87

    Article  CAS  Google Scholar 

  2. Xia F, Wang H, Xiao D, Dubey M, Ramasubramaniam A (2014) Two-dimensional material nanophotonics. Nat Photonics 8:899–907

    Article  CAS  Google Scholar 

  3. Akinwande D, Petrone N, Hone J (2014) Two-dimensional flexible nanoelectronics. Nat Commun 5:5678. https://doi.org/10.1038/ncomms6678

    Article  CAS  PubMed  Google Scholar 

  4. Chhowalla M, Jena D, Zhang H (2016) Two-dimensional semiconductors for transistors. Nat Rev Mater 1:16052

    Article  CAS  Google Scholar 

  5. Miro P, Audiffred M, Heine T (2014) An atlas of two-dimensional materials. Chem Soc Rev 43:6537–6554

    Article  CAS  Google Scholar 

  6. Liu H, Du Y, Deng Y, Ye P (2015) Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chem Soc Rev 44:2732–2743

    Article  CAS  Google Scholar 

  7. Guo Y, Xu K, Wu C, Zhao J, Xie Y (2015) Surface chemical-modification forengineering the intrinsic physical properties of inorganic two-dimensional nanomaterials. Chem Soc Rev 44:637–646

    Article  CAS  Google Scholar 

  8. Kong X, Liu Q, Zhang C, Peng Z, Chen Q (2017) Elemental two-dimensional nanosheets beyond graphene. Chem Soc Rev 46:2127–2157

    Article  CAS  Google Scholar 

  9. Mannix A, Zhou X, Kiraly B, Wood J, Alducin D, Myers B, Liu X, Fisher B, Santiago U, Guest J, Yacaman M, Ponce A, Oganov A, Hersam M, Guisinger N (2015) Synthesis of borophenes: anisotropic, two-dimensional boron polymorphs. Science 350:1513–1516

    Article  CAS  Google Scholar 

  10. Jing Y, Zhang X, Zhou Z (2016) Phosphorene: what can we know from computations? WIREs Comput Mol Sci 6:5–19

    Article  CAS  Google Scholar 

  11. Tang Q, Zhou Z, Chen Z (2015) Innovation and discovery of graphene-like materials via density functional theory computations, WIREs Comput. Mol Sci 5:360–379

    Article  CAS  Google Scholar 

  12. Li W, Wei J, Bian B, Liao B, Wang G (2021) Tunable Schottky barrier in planar two-dimensional metal/black phosphorus heterojunctions. Phys E. https://doi.org/10.1016/j.physe.2021.114702

    Article  Google Scholar 

  13. Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen X, Zhang Y (2014) Black phosphorus field-effect transistors. Nat Nanotechnol 9:372–377

    Article  CAS  Google Scholar 

  14. Liu H, Neal A, Zhu Z, Xu X, Tomanek D, Ye P, Luo Z (2014) Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8:4033–4041

    Article  CAS  Google Scholar 

  15. Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y (2014) Black phosphorus field-effect transistors Nature Nanotechnology 9(5):372–377

    CAS  PubMed  Google Scholar 

  16. Brown A, Rundqvist S (1965) Refinement of the crystal structure of black phosphorus. Acta Crystallogr 19:684–685

    Article  CAS  Google Scholar 

  17. Mahboobi T, Zardoost MR, Toosi MR (2020) Phosphorene and Na-, Ca-, and Fe-doped phosphorene as candidates for delivery of mercaptopurine and fluorouracil anticancer drugs. J Mol Model 26:269

    Article  CAS  Google Scholar 

  18. Cartz L, Srinivasa SR, Riedner RJ, Jorgensen JD, Worlton TG (1979) Effect of pressure on bonding in black phosphorus. J Chem Phys 71:1718–1721

    Article  CAS  Google Scholar 

  19. Keyes RW (1953) The electrical properties of black phosphorus. Phys Rev 92:580–584

    Article  CAS  Google Scholar 

  20. Warschauer D (1963) Electrical and optical properties of crystalline black phosphorus. J Appl Phys 34:1853–1860

    Article  CAS  Google Scholar 

  21. Maruyama Y, Suzuki S, Kobayashi K, Tanuma S (1981) Synthesis and some properties of black phosphorus single crystals. Physica B&C 105:99–102

    Article  CAS  Google Scholar 

  22. Akahama Y, Endo S, Narita S (1983) Electrical properties of black phosphorus single crystals. J Phys Soc Jpn 52:2148–2155

    Article  CAS  Google Scholar 

  23. Rodin AS, Carvalho A, Neto AHC (2014) Strain-induced gap modification in black phosphorus. Phys Rev Lett 112:176801

  24. Carvalho A, Wang M, Zhu X, Rodin AS, Su H, Neto AHC (2016) Phosphorene: from theory to applications. Nat Rev Mater 1(11):16061

    Article  CAS  Google Scholar 

  25. Yasaei P, Kumar B, Foroozan T, Wang C, Asadi M, Tuschel D, Indacochea J, Klie R, Salehi-Khojin A (2015) High-quality black phosphorus atomic layers by liquid-phase exfoliation. Adv Mater 27:1887–1892

    Article  CAS  Google Scholar 

  26. Xia F, Wang H, Jia Y (2014) Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat Commun 5:4458

    Article  CAS  Google Scholar 

  27. Hashmi A, Hong J (2015) Transition Metal Doped Phosphorene: First-Principles Study. Phys Chem C 119(17):9198–9204

    CAS  Google Scholar 

  28. Zhang HP, Hu W, Du A, Lu X, Zhang YP, Zhou J, Lin X, Tang Y (2018) Doped phosphorene for hydrogen capture: A DFT study. Appl Surf Sci 433:249–255

    Article  CAS  Google Scholar 

  29. Becke AD (1993) J Chem Phys 98:5648–5652

    Article  CAS  Google Scholar 

  30. Lee C, Yang W, Parr RG (1988) Phys Rev B 37:785–789

    Article  CAS  Google Scholar 

  31. Gaussian 09, Revision A.1, Frisch MJ, Trucks GW, Schlegel HB, Scuseria GE, Robb MA, Cheeseman JR, Scalmani G, Barone V, Mennucci B, Petersson GA, Nakatsuji H, Caricato M, Li X, Hratchian HP, Izmaylov AF, Bloino J, Zheng G, Sonnenberg JL, Hada, M, Ehara M, Toyota K, Fukuda R, Hasegawa J, Ishida M, Nakajima T, Honda Y, Kitao O, Nakai H, Vreven T, Montgomery Jr. JA, Peralta JE, Ogliaro F, Bearpark M, Heyd JJ, Brothers E, Kudin KN, Staroverov VN, Kobayashi R, Normand J, Raghavachari K, Rendell A, Burant JC, Iyengar SS, Tomasi J, Cossi M, Rega N, Millam NJ, Klene M, Knox JE, Cross JB, Bakken V, Adamo C, Jaramillo J, Gomperts R, Stratmann RE, Yazyev O, Austin AJ, Cammi R, Pomelli C, Ochterski JW, Martin RL, Morokuma K, Zakrzewski VG, Voth GA, Salvador P, Dannenberg JJ, Dapprich S, Daniels AD, Farkas Ö, Foresman JB, Ortiz JV, Cioslowski J, Fox DJ, Gaussian, Inc., Wallingford CT (2009)

  32. O’Boyle BNM, Tenderholt AL, Langner KM (2008) J Comput Chem 29:839–845

    Article  Google Scholar 

  33. Parr RG, Szentpaty LV, Liu S (1999) Electrophilicity Index. J Am Chem Soc 121:1922–1924

    Article  CAS  Google Scholar 

  34. Mulliken RS (1955) J Chem Phys 23:1833–1840

    Article  CAS  Google Scholar 

Download references

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Mohammad Reza Zardoost: Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshahr, Iran; Tahereh Mahboobi: Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshahr, Iran; Mohammad Reza Toosi: Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshahr, Iran, 1. Made substantial contributions to the conception or design of the work; or the acquisition, analysis, or interpretation of data; or the creation of new software used in the work, 2. Drafted the work or revised it critically for important intellectual content, 3. Approved the version to be published and 4. Agree to be accountable for all aspects of the work in ensuring that questions related to the accuracy or integrity of any part of the work are appropriately investigated and resolved.

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Correspondence to Mohammad Reza Zardoost.

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Mahboobi, T., Zardoost, M.R. & Toosi, M.R. A comparative DFT study of the effect of doping atoms of groups III, IV, and V on the electronic properties of phosphorene. Struct Chem 33, 131–145 (2022). https://doi.org/10.1007/s11224-021-01825-8

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