In the present work, the external quantum efficiency of the blue LED- structures based on InGaN/GaN is studied as a function of the current density (or intensity of optical excitation) under electroluminescence (or photoluminescence) at different temperatures.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 30–32, July, 2013.
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Prudaev, I.A., Romanov, I.S., Kop’ev, V.V. et al. Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence. Russ Phys J 56, 757–759 (2013). https://doi.org/10.1007/s11182-013-0096-3
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DOI: https://doi.org/10.1007/s11182-013-0096-3