The results of the experimental and theoretical studies of charge neutrality in semiconductor materials are summarized. It is shown that the charge neutrality level determines the electronic properties of semiconductors saturated by intrinsic lattice defects, the electronic state of the semiconductor surface, and, to a large extent, the height of the metal/semiconductor barrier as well as the energy band discontinuities in semiconductor heteropairs.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Tersoff, Phys. Rev. Lett., 53, 465 (1984).
V. N. Brudnyi, S. N. Grinyaev, and V. E. Stepanov, Physica B, 212, 429 (1995).
V. N. Brudnyi and S. N. Grinyaev, Fiz. Tekh. Poluprovodn., 35, Vyp. 7, 889 (2001).
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin, Physica B, 348, 213 (2004).
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin, Russ. Phys. J., 46, No. 6, 594 (2003).
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin, Russ. Phys. J., 50, No. 5, 429 (2007).
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin, Fiz. Tekh. Poluprovodn., 37, Vyp. 5, 557 (2003).
V. N. Brudnyi, N. G. Kolin, and L. S. Smirnov, Fiz. Tekh. Poluprovodn., 41, Vyp. 9, 1031 (2007.
V. N. Brudnyi, A. V. Kosobutskii, and N. G. Kolin, Fiz. Tekh. Poluprovodn., 43, Vyp. 10, 1312 (2009.
V. N. Brudnyi, A. V. Kosobutskii, and S. N. Sarkisov, Fiz. Tekh. Poluprovodn., 44, Vyp. 9, 1194 (2010).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 27–29, July, 2013.
Rights and permissions
About this article
Cite this article
Brudnyi, V.N. Charge Neutrality in Semiconductors: Defects, Interfaces, Surface. Russ Phys J 56, 754–756 (2013). https://doi.org/10.1007/s11182-013-0095-4
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-013-0095-4