Abstract
Etch rates of hexatriacontane (HTC) as high as ~10 mg s−1 m−2 in late O2 post-discharge are obtained at 333 K where no significant UV nor VUV irradiation occurs. Introducing N2 in the gas mixture helps control the ratio of O/O2 densities, which is shown to play a key role in the functionalization or etching of the HTC. The oxygen atoms are required for any further modification of the HTC because they initiate the formation of the radical chains by abstraction of one hydrogen. O(3P) atoms do not contribute directly to break the alkane chain close to room temperature but they can functionalise it. O2 is the important reactive species for the etching because of the role played by the peroxide groups on the scission of the hydrocarbon chains.
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Hody, V., Belmonte, T., Pintassilgo, C.D. et al. Modification of Hexatriacontane by O2–N2 Microwave Post-Discharges. Plasma Chem Plasma Process 26, 251–266 (2006). https://doi.org/10.1007/s11090-006-9017-3
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DOI: https://doi.org/10.1007/s11090-006-9017-3