Abstract
In this work, BInGaAs single quantum wells have been grown by metal–organic vapor phase epitaxy at different growth temperatures, on a GaAs substrate. The incorporation of the boron and the indium increases with decreasing the growth temperature. Structures have been characterized using the atomic force microscopy (AFM) and the static photoluminescence (PL) between 10 and 300 K. AFM measurements show that the growth temperature modifies the growth mode which affects the PL response. The optical study predicts that the low growth temperature is the best condition to improve the quality of the investigated structure. The morphological study shows a surface roughness of less than 10 Å with the formation of 2D islets, at the lowest growth temperature. The PL peak position, the full width at half maximum, and the PL intensity as a function of the temperature have shown an abnormal evolution as a result of the localization phenomenon. It is due to the alloy fluctuation (the thickness and the composition) related to growth conditions. The optical study showed a reduction in the localized states related to the sample grown at the high growth temperature. The localized states’ ensemble model has been introduced for a better quantitative re-understanding. The proposed structure proved its capacity for a dual application: telecom wavelengths and multijunction solar cells.
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The authors extend their appreciation to the Deanship of Scientific Research at King Khalid University for funding this work through research group program under Grant Number RGP. 2/203/42.
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Hidouri, T., Saidi, F. & Al-Shahri, B.M. Tuning spontaneous emission in BInGaAs/GaAs QWs by varying the growth temperature: above 1.2 µm emission and solar cells application. Opt Quant Electron 53, 532 (2021). https://doi.org/10.1007/s11082-021-03160-y
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DOI: https://doi.org/10.1007/s11082-021-03160-y