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Perovskite/silicon tandem solar cells–compositions for improved stability and power conversion efficiency

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Abstract

Perovskite/Silicon Tandem Solar Cells (PSTSCs) represent an emerging opportunity to compete with industry-standard single junction crystalline silicon (c-Si) solar cells. The maximum power conversion efficiency (PCE) of single junction cells is set by the Shockley–Queisser (SQ) limit (33.7%). However, tandem cells can expand this value to ~ 45% by utilising two stacked solar cells to harvest the solar spectrum more efficiently. 33.9% PCE has already been achieved with PSTSCs. This perspective analyses recent advances in PSTSC technology, with an emphasis on optimal perovskite composition, the problem and mitigation of light-induced halide phase segregation, self-assembled hole transporting monolayers and additives that can improve and stabilise the perovskite. Top-performing compositions show three cationic components (Cs+, FA+, Pb2+) and three anionic (I−, Br−, Cl−) with a bandgap between 1.55 and 1.77 eV and a theoretical maximum of 1.73 eV (717 nm). Anionic additives such as (Br3)− and SCN− reduce trap states and segregation. 2D-perovskite grain boundary interfaces are created with cationic alkylammonium additives such as methyl-phenethylammonium (MPEA) and result in improved performance. 2-, 3- or 4-terminal devices with a (partly) textured silicon heterojunction (SHJ) bottom cell are ideal. An ultra-thin interfacial recombination layer (~ 5 nm) of indium tin oxide (ITO) or indium zinc oxide (IZO) containing a carbazole-based hole transporting self-assembled monolayer (Me-4PACz) is used for optimal 2-terminal tandem devices.

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Copyright 2020 American Chemical Society [24]

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Reproduced from Energy Environ. Sci., 2023, 10.1039.D2EE04007G, with permission from the Royal Society of Chemistry[97]

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Abbreviations

2 T, 3 T, 4 T:

Two, three, four Terminal

a-Si:

Amorphous silicon

a-Si:H:

Hydrogenated amorphous silicon

CIGS:

Copper Indium Gallium diSelenide

c-Si:

Crystalline Silicon

CTL:

Charge Transport Layer

Cz:

Czochralski

ETL:

Electron Transport Layer

EQE:

External Quantum Efficiency

FF:

Fill Factor

FZ:

Float-Zone

HTL:

Hole Transport Layer

IBC:

Interdigitated Back Contact

IR:

Infrared

Jsc:

Short-Circuit Current Density

mc-Si:

Multicrystalline silicon

nc-Si:

Nanocrystalline silicon

NIR:

Near-IR

NREL:

National Renewable Energy Laboratory

PCE:

Power Conversion Efficiency

PERC:

Passivated Emitter Rear Cell

PL:

Photoluminescence

PSC:

Perovskite Solar Cell

PSTSC:

Perovskite/Si Tandem Solar Cell

PV:

Photovoltaic

RL:

Recombination Layer

SAM:

Self-Assembling Monolayer

SHJ:

Silicon Heterojunction

SQ:

Shockley-Queisser

TCO:

Transparent Conductive Oxide

TJ:

Tunnel Junction

TSC:

Tandem Solar Cell

UV:

Ultraviolet

Voc:

Open-Circuit Voltage

2PACz:

(2-(9H-carbazol-9-yl)ethyl)phosphonic acid

4-MPEA:

4-Methylphenethylammonium

ADDC:

Ammonium diethyldithiocarbamate

BA:

Butylammonium

BHC:

Benzylhydrazine hydrochloride

FA:

Formamidinium—HC(NH2)2

ITO:

Indium doped Tin Oxide

MA:

Methylammonium—CH3NH3

MeO-4PACz:

(4-(3,6-Dimethoxy-9H-carbazol-9-yl)butyl)phosphonic acid

Me-4PACz:

4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid

PCBM:

[6, 6]-phenyl-C61-butyric acid methyl ester

PEA:

Phenethylammonium

PEDOT-PSS:

Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate

PI :

Piperazinium iodide

PTAA:

Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine

spiro-OMeTAD:

2,2′7,7′-Tetrakis(N,N-di-p-methoxyphenyl amine)-9,9′-spirobifluorene

TEA:

Thiophene-ethylammonium

TMA:

Thiophene-methylammonium

TPA:

Trimethylphenylammonium

ZTO:

Zinc doped Tin Oxide

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Acknowledgements

We thank Jordan P. Mulvaney for language corrections, Srest Somay for his help with the graphical abstract and the University of Amsterdam for structural support.

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    Charles Marchant & René M. Williams

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Marchant, C., Williams, R.M. Perovskite/silicon tandem solar cells–compositions for improved stability and power conversion efficiency. Photochem Photobiol Sci 23, 1–22 (2024). https://doi.org/10.1007/s43630-023-00500-7

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