Abstract
We report on growth, fabrication and characterization of the metal–semiconductor–metal (MSM) photodiode based on type-II ZnSe/ZnTe heterostructure. Heterostructure was grown on semi-insulating GaAs substrates by MOVPE. For the first time we present the results of experimental investigations of the MSM photodetector on the base of type-II ZnSe/ZnTe superlattice. The MSM-photodetector demonstrates very low dark current, high current sensitivity and external quantum efficiency. The maximum photoresponse of the MSM-detector at the wavelength 620 nm corresponds to current sensitivity 0.22 A/W and external quantum efficiency 44%. Photoresponse of the MSM-detector shows two peaks of response located at 620 nm and 870 nm. ZnSe/ZnTe type-II superlattice structure reduces the MSM-diode dark current significantly. For the MSM-diode with finger width and gap of 3 µm and 100 × 100 µm2 photosensitive area we have obtained dark current density 10−8 A/cm2 at room temperature.
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Acknowledgements
We thank V.D. Shcherbakov, V.O. Yapaskurt and for their help in carrying out the experiments on energy-dispersive X-ray analysis and M.P. Temiryazeva for atomic-force microscopy of the samples. This work was partly supported by RFFI (Russian Fund of Fundamental Investigations), Grant No. 17-07-00205.
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Averin, S.V., Kuznetzov, P.I., Zhitov, V.A. et al. Electrical, optical and spectral characteristics of type-II ZnSe/ZnTe/GaAs superlattice and MSM-photodetector on their base. Opt Quant Electron 50, 368 (2018). https://doi.org/10.1007/s11082-018-1623-9
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DOI: https://doi.org/10.1007/s11082-018-1623-9