Abstract
An experimental work focused on measurement of reflection coefficient of GaP single crystal specimens in the exciton resonance region is described. Occurrence of negative reflection in the specimen with a thickness of 100 μm and initial concentration of charge carriers of 1015 cm−3 over a wavelength interval spanning from 0.54 to 0.81 μm (from 1.52 to 2.30 eV) has been detected. Irradiation of the specimen by fast electrons with a dose of 1016 e/cm2 enhances negative reflection. Negative reflection is attributed to the formation of surface excitons with negative effective mass.
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Figarova, S.R., Figarov, V.R. & Rashidova, S.S. Negative reflection in GaP single crystals. Opt Quant Electron 48, 452 (2016). https://doi.org/10.1007/s11082-016-0722-8
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DOI: https://doi.org/10.1007/s11082-016-0722-8