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Hybrid III–V semiconductor/silicon three-port filter on 1D-PhC wire

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Abstract

We report on the design of a hybrid III/V semiconductor/silicon three-port channel drop filter at 1,550 nm. The device is excited through a Si photonic wire positioned below the resonant cavity, which is in turn designed by properly drilling holes on a InP 1D-PhC wire. The output signal is collected by a photonic wire waveguide, laterally coupled to the resonator and terminated with a suitable mirror. To raise the drop efficiency above the theoretical limit of 50 % allowed by a design exploiting a single cavity, a different topology based on a two-cavity configuration is then investigated. In this case, a drop efficiency close to 100 % is obtained.

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Acknowledgments

The authors acknowledge funding from the EC under the project Copernicus (249012).

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Authors and Affiliations

  1. Department of Engineering, University of Ferrara, Ferrara, Italy

    Stefania Malaguti, Gaetano Bellanca & Stefano Trillo

  2. Laboratoire de Photonique et de Nanostructures, CNRS-UPR20, Marcoussis, France

    Alexandre Bazin, Fabrice Raineri & Rama Raj

Authors
  1. Stefania Malaguti
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  2. Gaetano Bellanca
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  3. Alexandre Bazin
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  4. Fabrice Raineri
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  5. Rama Raj
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  6. Stefano Trillo
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Corresponding author

Correspondence to Gaetano Bellanca.

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Malaguti, S., Bellanca, G., Bazin, A. et al. Hybrid III–V semiconductor/silicon three-port filter on 1D-PhC wire. Opt Quant Electron 47, 1949–1963 (2015). https://doi.org/10.1007/s11082-014-0062-5

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  • DOI: https://doi.org/10.1007/s11082-014-0062-5

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