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Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

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Abstract

We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.

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Authors and Affiliations

  1. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083, Shanghai, China

    W. D. Hu, X. S. Chen, F. Yin & W. Lu

  2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yu Tian Road, 200083, Shanghai, China

    Z. H. Ye & C. Lin

Authors
  1. W. D. Hu
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  2. X. S. Chen
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  3. Z. H. Ye
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  4. C. Lin
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  5. F. Yin
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  6. W. Lu
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Corresponding authors

Correspondence to W. D. Hu or X. S. Chen.

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Hu, W.D., Chen, X.S., Ye, Z.H. et al. Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector. Opt Quant Electron 41, 699–704 (2009). https://doi.org/10.1007/s11082-010-9381-3

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  • DOI: https://doi.org/10.1007/s11082-010-9381-3

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