Abstract
The subband energy dispersions and optical intersubband transitions in n-type InGaAs/Al x Ga1-x As quantum well infrared photodetector (QWIP) with linear-graded barriers are calculated using an 8-band k·p model combined with the envelope-function Fourier expansion. The relaxation of quantum confinement in the growth direction has been taken into reasonable consideration. This work is helpful for the analysis and the design of QWIPs with complex well and barrier structures.
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References
Dang Y.X., Fan W.J. et al (2005). J. Appl. Phys. 97: 103718
Levine B.F. (1993). J. Appl. Phys. 74(8): R1
Liu H.C., Song C.Y. et al. (2004). Appl. Phys. Lett. 84(20): 4068
Lenchyshyn L.C., Liu H.C. et al (1996). J. Appl. Phys. 79(6): 3307
Lee J.-H., Li S.S. et al. (2001). Infrared Phys. Tech. 42: 123
Touse M.P., Karunasiri G. et al. (2005). Appl. Phys. Lett. 86: 093501
Vurgaftman I., Meyer J.R., Ram-Mohan L.R. (2001). J. Appl. Phys. 89: 5815
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Liu, W., Zhang, D.H. & Fan, W.J. Modeling of intersubband transitions in quantum well infrared photodetectors with complex potential profiles. Opt Quant Electron 38, 1101–1106 (2006). https://doi.org/10.1007/s11082-006-9047-3
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DOI: https://doi.org/10.1007/s11082-006-9047-3