Skip to main content
Log in

Intersubband optical absorption in (In,Ga)N/GaN double quantum wells considering applied electric field effects

  • Published:
Journal of Computational Electronics Aims and scope Submit manuscript

Abstract

In the present paper, we theoretically examine the total absorption coefficient related to inter-conduction subband 1S–2P transitions in symmetric InGaN/GaN double quantum wells within the effective mass and parabolic band approximations, focusing on the impact of the structure size, chemical composition, impurity position, and external applied electric field. The eigenvalues and corresponding eigenfunctions are calculated numerically by solving the one-dimensional Schrödinger equation using the finite difference method. The calculations are made considering a finite potential barrier and dielectric and effective mass mismatches between the wells and barriers. The results show that the position and height of the resonant optical absorption peak are very sensitive and can be adjusted by an appropriate choice of applied electric field, indium composition, impurity, and structure size, opening a new avenue for high-performance optical modulators and various infrared optical device applications.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4

Similar content being viewed by others

References

  1. Radosavljević, A., Radovanović, J., Milanović, V.: Optimization of cubic GaN/AlGaN quantum well-based structures for intersubband absorption in the infrared spectral range. Solid State Commun. 182, 38–42 (2014). https://doi.org/10.1016/j.ssc.2013.12.006

    Article  Google Scholar 

  2. Machhadani, H., Tchernycheva, M., Sakr, S., Rigutti, L., Colombelli, R., Warde, E., Mietze, C., As, D.J., Julien, F.H.: Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range. Phys. Rev. B 83, 075313 (2011). https://doi.org/10.1103/PhysRevB.83.075313

    Article  Google Scholar 

  3. Zhi-Hai, Z., LiLi, Z., Liu, C., Jian-Hui, Y.: Electric field effect on the nonlinear optical properties in asymmetrical Gaussian potential quantum wells. Superlattices Microstruct. 85, 385–391 (2015). https://doi.org/10.1016/j.spmi.2015.06.003

    Article  Google Scholar 

  4. Tung, L.V., Vinh, P.T., Dinh, L., Phuc, H.V.: Linear and nonlinear magneto-optical absorption in a triangular quantum well. Int. J. Mod. Phys. B 32, 1850162 (2018). https://doi.org/10.1142/S021797921850162X

    Article  Google Scholar 

  5. Davies, M.J., et al.: A study of the inclusion of prelayers in InGaN/GaN single-and multiple-quantum-well structures. Phys. Status Solidi B 252(5), 866–872 (2015). https://doi.org/10.1002/pssb.201451535

    Article  Google Scholar 

  6. Lei, S.Y., Dong, Z.G., Shen, B., Zhang, G.Y.: Intersubband transition in symmetric AlxGa1−xN/GaN double quantum wells with applied electric field. Phys. Lett. A 373, 136–139 (2008). https://doi.org/10.1016/j.physleta.2008.10.091

    Article  Google Scholar 

  7. Shu-Fang, M., Qu, Y., Shi-Liang, B.: Intersubband optical absorption of electrons in double parabolic quantum wells of AlxGa1-xAs/AlyGa1−yAs. Chin. Phys. B 27(2), 027103 (2018). https://doi.org/10.1088/1674-1056/27/2/027103

    Article  Google Scholar 

  8. Zhao, Q., Aqiqi, S., Jin-Feng, Y., Kria, M., Kang-Xian, G., Feddi, E., Zhi-Hai, Z., Jian-Hui, Y.: Influence of position-dependent effective mass on the nonlinear optical properties in (Al,Ga)As/GaAs single and double triangular quantum wells. Phys. E Low Dimensional Syst. Nanostructures 115, 113707 (2020). https://doi.org/10.1016/j.physe.2019.113707

    Article  Google Scholar 

  9. Ozturk, E., Sokmen, I.: Intersubband transitions in an asymmetric double quantum well. Superlattices Microstruct. 41, 36–43 (2007). https://doi.org/10.1016/j.spmi.2006.10.006

    Article  Google Scholar 

  10. El Ghazi, H., Jorio, A., Zorkani, I.: Linear and nonlinear intra-conduction band optical absorption in (In,Ga)N/GaN spherical QD under hydrostatic pressure. Opt. Commun. 331, 73–76 (2014). https://doi.org/10.1016/j.optcom.2014.05.055

    Article  Google Scholar 

  11. Kasapoglu, E., Sokmen, I.: The effects of intense laser field and electric field on intersubband absorption in a double-graded quantum well. Phys. B Condens. Matter 403, 3746 (2008). https://doi.org/10.1016/j.physb.2008.06.024

    Article  Google Scholar 

  12. Karimi, M.J., Keshavarz, A., Poostforush, A.: Linear and nonlinear intersubband optical absorption and refractive index changes of asymmetric double semi-parabolic quantum wells. Superlattices Microstruct. 49(4), 441–452 (2011). https://doi.org/10.1016/j.spmi.2011.01.003

    Article  MATH  Google Scholar 

  13. Ha, S.H., Ban, S.L., Zhu, J.: Intersubband absorption in strained AlGaN/GaN double quantum wells. Phys. B Condens. Matter 406, 3640–3645 (2011). https://doi.org/10.1016/j.physb.2011.06.062

    Article  Google Scholar 

  14. Kasapoglu, E., Sakiroglu, S., Sari, H., Sokmen, I., Duque, C.A.: Binding energy and optical absorption of donor impurity states in “12-6” tuned GaAs/(Ga,Al)As double quantum well under the external fields. Phys. B Condens. Matter 554, 72–78 (2018). https://doi.org/10.1016/j.physb.2018.11.006

    Article  Google Scholar 

  15. Liu, D., Cheng, Y., He, J.: Numerical design of AlGaN/GaN double quantum wells for intersubband absorption in the wavelength range of λ 9.3–10.6 μm. Superlattices Microstruct. 86, 313–319 (2015). https://doi.org/10.1016/j.spmi.2015.07.063

    Article  Google Scholar 

  16. Ungan, F., Martínez-Orozco, J.C., Restrepo, R.L., Mora-Ramos, M.E., Duque, C.A.: Effect of applied electric field on the nonlinear optical properties of modulation-doped GaAs/AlxGa1-xAs double quantum well. Superlattices Microstruct. 126, 89–97 (2018). https://doi.org/10.1016/j.spmi.2018.12.019

    Article  Google Scholar 

  17. Nava-Maldonado, F.M., Rojas-Briseño, J.G., Martínez-Orozco, J.C., Mora-Ramos, M.E.: Strain effects in the absorption coefficient and relative refractive index change in double asymmetric (Al,Ga1)N/GaN quantum wells. Phys. E Low Dimensional Syst. Nanostructures 111, 134–140 (2019). https://doi.org/10.1016/j.physe.2019.03.008

    Article  Google Scholar 

  18. El Ghazi, H., Zorkani, I., Jorio, A.: Stark effect-dependent of impurity-related nonlinear optical absorption of a (In,Ga)N/GaN spherical quantum dot. Phys. Scr. 90(3), 035804 (2015). https://doi.org/10.1088/0031-8949/90/3/035804

    Article  Google Scholar 

  19. El Ghazi, H., John Peter, A.: Built-in electric field effect on optical absorption spectra of strained (In,Ga)N-GaN nanostructures. Phys. B Condens. Matter 470–471, 64–68 (2015). https://doi.org/10.1016/j.physb.2015.04.028

    Article  Google Scholar 

  20. Zeng, Z., Garoufalis, C.S., Terzis, A.F., Baskoutas, S.: Linear and nonlinear optical properties of ZnO/ZnS and ZnS/ZnO core shell quantum dots: effects of shell thickness, impurity, and dielectric environment. J. Appl. Phys. 114, 023510 (2013). https://doi.org/10.1063/1.4813094

    Article  Google Scholar 

  21. Ahn, D., Chuang, S.I.: IEEE J. Quant. Elecctron. QE-23, 2196 (1987)

  22. Ozturka, E., Sokmen, I.: Electric field effect on the nonlinear optical absorption in double semi-graded quantum wells. Opt. Commun. 305, 228–235 (2013). https://doi.org/10.1016/j.optcom.2013.05.021

    Article  Google Scholar 

  23. Yesilgul, U., Al, E.B., Martínez-Orozco, J.C., Restrepo, R.L., Mora-Ramos, M.E., Duque, C.A., Ungan, F., Kasapoglu, E.: Linear and nonlinear optical properties in an asymmetric double quantum well under intense laser field: effects of applied electric and magnetic fields. Opt. Mater. 58, 107–112 (2016). https://doi.org/10.1016/j.optmat.2016.03.043

    Article  Google Scholar 

  24. Kasapoglu, E., Sakiroglu, S., Sari, H., Sökmen, I., Duque, C.A.: Optical characterization of laser-driven double Morse quantum wells. Heliyon 5, e02022 (2019). https://doi.org/10.1016/j.heliyon.2019.e02022

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Haddou El Ghazi.

Ethics declarations

Conflict of interest

The authors declare that there is no conflict of interest concerning the present paper.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

En-nadir, R., El Ghazi, H., Jorio, A. et al. Intersubband optical absorption in (In,Ga)N/GaN double quantum wells considering applied electric field effects. J Comput Electron 21, 111–118 (2022). https://doi.org/10.1007/s10825-021-01830-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10825-021-01830-4

Keywords

Navigation