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Tribochemical interaction between nanoparticles and surfaces of selective layer during chemical mechanical polishing

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Abstract

Nanoparticles have been widely used in polish slurries such as those in the chemical mechanical polishing (CMP) process. For understanding the mechanisms of CMP, an atomic force microscope (AFM) is used to characterize polished surfaces of selective layers, after a set of polishing experiments. To optimize the CMP polishing process, one needs to get information on the interaction between the nano-abrasive slurry nanoparticles and the surface of selective layer being polished. The slurry used in CMP process of the solid surfaces is slurry with large nanoparticle size colloidal silica sol nano-abrasives. Silica sol nano-abrasives with large nanoparticle are prepared and characterized by transmission electron microscopy, particles colloidal size, and Zeta potential in this paper. The movement of nanoparticles in liquid and the interaction between nanoparticles and solid surfaces coating with selective layer are very important to obtain an atomic alloy smooth surface in the CMP process. We investigate the nanoparticle adhesion and removal processes during CMP and post-CMP cleaning. The mechanical interaction between nanoparticles and the wafer surface was studied using a microcontact wear model. This model considers the nanoparticle effects between the polishing interfaces during load balancing. Experimental results on polishing and cleaning are compared with numerical analysis. This paper suggests that during post-CMP cleaning, a combined effort in chemical and mechanical interaction (tribochemical interactions) would be effective in removal of small nanoparticles during cleaning. For large nanoparticles, more mechanical forces would be more effective. CMP results show that the removal rate has been improved to 367 nm/min and root mean square (RMS) of roughness has been reduced from 4.4 to 0.80 nm. Also, the results show that the silica sol nano-abrasives about 100 nm are of higher stability (Zeta potential is −65 mV) and narrow distribution of nanoparticle size. Consequently, one kind of alkali slurry containing 100-nm silica sol for the solid surfaces CMP coating through selective transfer is studied in this paper.

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References

  • Ahn Y, Yoon J-Y, Baek C-W, Kim Y-K (2004) Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction. Wear 257:785–789

    Article  CAS  Google Scholar 

  • Cooper K, Cooper J, Groschopf J, Flake J, Solomentsev Y, Karkas J (2002) Effects of particle concentration on chemical planarization. Electrochem Solid-State Lett 5(12):G109–G112

    Article  CAS  Google Scholar 

  • de Nardis D, Doi T, Hiskey B, Ichikawa K, Ichikawa D, Philipossian A (2006) Modelling copper CMP removal rate dependency on wafer pressure, velocity, and dissolved oxygen concentration. J Electrochem Soc 153(5):G428–G436

    Article  Google Scholar 

  • de Rege F, Zang P, Grumbine S, Aggio J, Martin R, Brusic V (2009) Organic oxidants for chemical mechanical planarization. Electrochem Solid-State Lett 12(1):H21–H25

    Article  Google Scholar 

  • Ein-Eli J, Starosvetsky D (2006) Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective. Electrochim Acta 52:1825–1838

    Article  Google Scholar 

  • Estragnat E, Tang G, Jahanmir S, Pei P, Martin JM, Liang H (2004) Experimental investigation on mechanisms of silicon chemical mechanical polishing. J Electron Mater 33(4):334–339

    Article  CAS  Google Scholar 

  • Estragnat E, Kulkarni M, Ng D, McMullen D, Bahten K, Ling H (2005) Friction forces in post CMP cleaning applications. A2C2 Magazine 8(1):14–78

    CAS  Google Scholar 

  • Garkunov DN (1981) Erhöhung der Verschleissfestigkeit auf der selektiven Übertrangung. VEB Verlag Technik, Berlin

    Google Scholar 

  • Garkunov D N (2001) Tribotechnology (Wear and Non-wear). Moscow, Textbook, (in Russian)

  • Hsieh H, Averback RS, Sellers H et al (1992) Molecular-dynamics simulations of collisions between clusters of atoms and metal substrates. Phys Rev Bulletin 45:4417

    Article  CAS  Google Scholar 

  • Ihnfeldt R, Talbor J (2007) Modelling of copper CMP using the colloidal behavior of an alumina slurry with copper nanoparticles. Electrochem Solid-State Lett 154(12):H1018–H1026

    CAS  Google Scholar 

  • Ilie F (2002) Tribological thin films formed by selective transfer. Tech. Publ. House, Bucharest

    Google Scholar 

  • Ilie F (2006) Studies and researches concerning the tribological behaviour of friction couple functioning with selective transfer. Tribol Int 39(8):774–780

    Article  CAS  Google Scholar 

  • Ilie F (2011) Investigation into layers formed by selective transfer CMP mechanisms with atomic force microscope. J Nanopart Res 13(10):5519–5526

    Article  CAS  Google Scholar 

  • Ilie F (2012) Models of nanoparticles movement, collision, and friction in chemical mechanical polishing (CMP). J Nanopart Res 14(3):752

    Article  Google Scholar 

  • Ilie F, Tita C (2009) Interaction between nanoparticles during chemical mechanical polishing (CMP). Optics Adv Mater 3(3):245–249

    CAS  Google Scholar 

  • Kauki T, Kimura T, Nakamura T (2013) Chemical and mechanical properties of Cu surface reaction layers in Cu–CMP to improve planarization. ECSJ Solid State Sci Technol 2(9):P375–P379

    Article  Google Scholar 

  • Kyuno K, Cahill DG, Averback RS et al (1999) Surface defects and bulk defect migration produced by ion bombardment of Si(001). Phys Rev Lett 83:4788

    Article  CAS  Google Scholar 

  • Lei H, Luo JB (2004) CMP of hard disk substrate using colloidal SiO2 slurry: preliminary experimental investigation. Wear 275(5–6):461–470

    Article  Google Scholar 

  • Li J, Lu X, He Y, Luo J (2011) Modelling the chemical–mechanical synergy during copper CMP. J Electrochem Soc 158(2):H197–H202

    Article  CAS  Google Scholar 

  • Lim MS, Paul AW, Scott SP (2004) Microscopic investigations of chemo-mechanical polishing of tungsten. Thin Solid Films 457(2):346–353

    Article  CAS  Google Scholar 

  • Luo J, Dornfeld DA (2003) Material removal regions in CMP for submicron IC fabrication: coupling effects of slurry chemicals, abrasive size distribution and wafer-pad contact area. IEEE Trans Semiconduct Manuf 16(1):45–56

    Article  Google Scholar 

  • Luo JB, Xu J, Duan FL, et al. (2004) Variations of surface layer colloided with nanoparticles. 1st international conference on advanced tribology, 1–3 December, Singapore

  • Padgurskas J, Snitka V, Jankauskas V, Andriušis A (2006) Selective transfer phenomenon in lubricated sliding surfaces with copper and its alloy coatings made by electro-pulse spraying. Wear 260(6):652–661

    Article  CAS  Google Scholar 

  • Palla BJ, Shah DO, Bielmann M (1998) Stabilization of alumina slurries in presence of oxidizers for tungsten chemical mechanical polishing. Electronics manufacturing technology symposium, twenty-third IEEE/CPMT, 155–163

  • Steigerwald JM, Muraka SP, Gutmann RJ (1997) Chemical Mechanical Planarization of Microelectronic Materials. Wiley, New York

    Book  Google Scholar 

  • Wang J, Cherin I, Haerle G (2010) Chemical mechanical planarization of tungsten with hard abrasieves. Electrochem Solid-State Lett 13(6):H182–H184

    Article  CAS  Google Scholar 

  • Yamaguchi Y, Gspann J (2002) Large-scale molecular dynamics simulations of cluster impact and erosion processes on a diamond surface. Phys Rev Bulletin 60:155408

    Article  Google Scholar 

  • Zantye PB, Kumar A, Sikder AK (2004) Chemical mechanical planarization for microelectronics applications. Mater Sci Eng 45(3–6):89–220

    Google Scholar 

  • Zhang KL (2004) Study on preparation and application of nanometer abrasive for chemical mechanical polishing in ULSI, Dissertation of doctor from Hubei University of Technology, Tianjin

  • Zhang KL, Song ZT, Lin CL, Feng SL, Chen B (2007) Colloidal nano-abrasives and slurry for chemical-mechanical polishing of semi-conductor materials. J Ceram Process Res 8(1):52–55

    Google Scholar 

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Correspondence to Filip Ilie.

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Ilie, F. Tribochemical interaction between nanoparticles and surfaces of selective layer during chemical mechanical polishing. J Nanopart Res 15, 1997 (2013). https://doi.org/10.1007/s11051-013-1997-3

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  • DOI: https://doi.org/10.1007/s11051-013-1997-3

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