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Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

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Abstract

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (~8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

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Authors and Affiliations

  1. Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India

    Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke & S. B. Krupanidhi

  2. Central Research Laboratory, Bharat Electronics, Bangalore, 560013, India

    Mahesh Kumar, Basanta Roul & A. T. Kalghatgi

  3. Office of Principal Scientific Advisor, Government of India, New Delhi, 110011, India

    Neeraj Sinha

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  1. Mahesh Kumar
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  2. Basanta Roul
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  3. Thirumaleshwara N. Bhat
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  4. Mohana K. Rajpalke
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  5. Neeraj Sinha
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  6. A. T. Kalghatgi
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  7. S. B. Krupanidhi
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Correspondence to S. B. Krupanidhi.

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Kumar, M., Roul, B., Bhat, T.N. et al. Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE. J Nanopart Res 13, 1281–1287 (2011). https://doi.org/10.1007/s11051-010-0121-1

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  • DOI: https://doi.org/10.1007/s11051-010-0121-1

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