Abstract
This study uses an incipient wet impregnation method to look into the structural and dielectric properties of Bentonite that have been changed by adding different amounts of Ce and Zn. X-ray diffraction (XRD) analysis showed that the montmorillonite phase was the most common in Ce- and Zn-doped bentonite. Silicon dioxide (SiO2) and quartz (Q) were also found. Scanning electron microscopy (SEM) demonstrated enhanced platelet aggregation and porous structures in doped compounds. Energy-dispersive X-ray spectroscopy (EDX) confirmed the presence of Si, Al, Na, Ce, Zn, Ca, Mg, Cl, Fe, and K elements. Dielectric analysis, focusing on frequency and temperature dependence, unveiled an inverse relationship between frequency and the dielectric constant. Additionally, a strong correlation between temperature and dielectric properties was established through regression equations, indicating an increase in dielectric constant with temperature. Electric modulus analysis showed dispersion at high frequencies, suggesting charge carrier mobility. The AC conductivity analysis showed that the conductivity consistently decreased as the temperature rose. There were clear frequency-independent plateaus and intrinsic charge carrier relaxation that were seen. A fitting analysis showed that charge carriers hopped and the dielectric relaxed, and adding Ce and Zn made the material less conductive. The novelty of this paper lies in its focus on examining the dielectric characteristics of doped materials based on bentonite, particularly concerning the incorporation of Zn and Ce.
Graphical Abstract
Highlights
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Investigation of structural and dielectric properties of Bentonite modified with Ce and Zn.
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Utilization of incipient wet impregnation technique for modification.
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Enhanced platelet aggregation and porous structures observed in doped compounds via SEM.
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Dispersion at high frequencies indicated by electric modulus analysis.
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Decrease in conductivity with rising temperature observed in AC conductivity analysis.
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Charge carrier hopping, and dielectric relaxation mechanisms identified through fitting analysis.
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Incorporation of Ce and Zn resulted in reduced conductivity in the materials.
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The authors extend their appreciation to the Deputyship for Research & Innovation, Ministry of Education in Saudi Arabia for funding this research work through the project number: 445-9-895.
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Conceptualization, A.H.B., J.D., and K.D.; Methodology, A.H.B., and J.D.; Software, A.H.B., MK, J.D., and K.D.; Validation, A.H.B., and J.D.; Formal analysis, A.H.B., and J.D.; Investigation, A.H.B., and J.D.; Resources, A.H.B.; Data curation, A.H.B.; Writing—original draft, A.H.B., and J.D.; Writing—review & editing, A.H.B., J.D., M.K., and K.D.; Visualization, A.H.B., and J.D.; Supervision, A.H.B. All authors have read and agreed to the published version of the manuscript.
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Bashal, A.H., Dhahri, J., Dhahri, K. et al. Enhancing dielectric properties of bentonite with Ce and Zn: structural insights and industrial applications. J Sol-Gel Sci Technol (2024). https://doi.org/10.1007/s10971-024-06372-2
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DOI: https://doi.org/10.1007/s10971-024-06372-2