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Ferroelectric properties of La and V co-substituted SrBi4Ti4O15 films prepared by sol-gel method

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Abstract

SrBi4Ti4O15 (SBTi), SrBi3.89La0.1Ti3.97V0.03O15 (SBLTV) thin films have been fabricated on Pt/Ti/SiO2/Si by the sol–gel method. Well-saturated hysteresis loops with remnant polarization around 46.7 μC/cm2 are obtained on Pt/SBLTV/Pt capacitors. The capacitor shows excellent fatigue resistance with no polarization reduction up to 109 switching cycles even at low test frequency of 50 kHz. The improvement of ferroelectric and fatigue-endurance properties are attributed to the La3+ and V5+ co-substitution, which brings about the concentration decrease and the mobility weakening of the defects.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 10274066) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2005052).

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Authors and Affiliations

  1. College of Physics Science and Technology, Yangzhou University, 225002, Yangzhou, China

    Hui Sun, Xiang-yu Mao, Wei Wang & Xiao-bing Chen

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  1. Hui Sun
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  2. Xiang-yu Mao
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  3. Wei Wang
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  4. Xiao-bing Chen
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Correspondence to Xiao-bing Chen.

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Sun, H., Mao, Xy., Wang, W. et al. Ferroelectric properties of La and V co-substituted SrBi4Ti4O15 films prepared by sol-gel method. J Sol-Gel Sci Technol 52, 197–201 (2009). https://doi.org/10.1007/s10971-009-2059-2

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  • DOI: https://doi.org/10.1007/s10971-009-2059-2

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