Abstract
(1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 [(1 − x)PMN–xPT] relaxor ferroelectric thin films with x = 0.1, 0.2 and 0.3 were deposited on LaNiO3(100)/Pt(111)/TiO2/SiO2/Si substrates by the radio-frequency magnetron sputtering technique. The dielectric properties and energy-storage performances of these films were investigated in detail. X-ray diffraction spectra indicated that the thin films crystallized into a pure perovskite phase after annealed at 700 °C. Moreover, all the (1 − x)PMN–xPT thin films showed the uniform and crack-free microstructure. With PT content increasing, the dielectric constant and the maximum polarization of the films increased gradually. A maximum recoverable energy-storage density of 31 J/cm3 was achieved in the thin films with x = 0.2 under 2000 kV/cm at room temperature. Thus, (1 − x)PMN–xPT thin films with proper chemical composition are a promising candidate for high energy-storage capacitor application.
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The authors would like to acknowledge the financial support from the Program for New Century Excellent Talents in University, the Natural Science Foundation of Inner Mongolia (2015JQ04), the Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region, and the Grassland Talent Plan of Inner Mongolia Autonomous Region.
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Wang, X., Zhang, L., Hao, X. et al. Dielectric properties and energy-storage performances of (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 relaxor ferroelectric thin films. J Mater Sci: Mater Electron 26, 9583–9590 (2015). https://doi.org/10.1007/s10854-015-3621-z
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DOI: https://doi.org/10.1007/s10854-015-3621-z